Zobrazeno 1 - 10
of 32
pro vyhledávání: '"E. S. Gornev"'
Autor:
A. A. Sharapov, E. S. Gornev
Publikováno v:
Российский технологический журнал, Vol 10, Iss 2, Pp 87-95 (2022)
Objectives. Over the past few decades, multiple knowledge management models have been developed by many research groups studying the innovation process in companies. However, these knowledge and information management models are rather general, and d
Externí odkaz:
https://doaj.org/article/d8cb4dfed3564c669b10ce1c68ab24a0
Autor:
E. S. Gornev, I. V. Matyushkin
Publikováno v:
Российский технологический журнал, Vol 9, Iss 6, Pp 73-87 (2021)
A comparative analysis of the “general formal technology (GFT)” by S. M. Krylov is carried out in the context of the published book of the authors “General Theory of Technologies and Microelectronics” (2020) and on the basis of his work of 20
Externí odkaz:
https://doaj.org/article/5961090f21a048a9a930f56f6ffab67c
Autor:
E. S. Shamin, E. S. Gornev
Publikováno v:
Russian Microelectronics. 51:649-653
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4f307d304982f4109c7d76fa5458273
https://doi.org/10.1134/s106373972208008x
https://doi.org/10.1134/s106373972208008x
Autor:
A. V. Shadrin, Ekaterina Kondratyuk, Anastasia Chouprik, E. S. Gornev, Roman V. Kirtaev, Dmitrii Negrov, Maksim Zhuk, Yury Matveyev
Publikováno v:
IEEE Transactions on Electron Devices. 68:4891-4896
One of the most attractive types of novel nonvolatile memory concepts is resistive random access memory (ReRAM) based on a reversible (“soft”) dielectric breakdown effect. The interest is caused by combining simple architecture with promising per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72fe57bff3d18807980663c728905f7e
https://doi.org/10.1109/ted.2021.3105089
https://doi.org/10.1109/ted.2021.3105089
Autor:
A. V. Shishlyannikov, A. A. Tatarintsev, E. S. Gornev, Konstantin V. Rudenko, A. V. Miakonkikh, V. O. Kuzmenko
Publikováno v:
Russian Microelectronics. 50:297-302
The selectivity of the reactive ion etching of functional materials included in the device structures of nanoelectronics with respect to the mask of a negative e-beam resist based on hydrogen-silsesquioxane (HSQ) is studied. The formation of nanostru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f263f45435be1437692b30c53d49368d
https://doi.org/10.1134/s1063739721050048
https://doi.org/10.1134/s1063739721050048
Autor:
Aleksandra A Koroleva, Aleksandr S. Slavich, E. V. Korostylev, Roman R. Khakimov, Anastasia Chouprik, Cheol Seong Hwang, Andrey M. Markeev, E. S. Gornev, A. G. Chernikova
Publikováno v:
ACS Applied Materials & Interfaces. 12:55331-55341
Resistive switching (RS) device behavior is highly dependent on both insulator and electrode material properties. In particular, the bottom electrode (BE) surface morphology can strongly affect RS characteristics. In this work, Ru films with differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::608b2ac5b9bc324754a16a1d7cb346b7
https://doi.org/10.1021/acsami.0c14810
https://doi.org/10.1021/acsami.0c14810
Publikováno v:
Applied Surface Science. 476:317-324
The selective pore sealing of porous organosilica glass (OSG k = 2.4) dielectrics by self-assembled monolayers (SAM) is studied, using three precursors: (3-trimethoxysilylpropyl) diethylenetriamine (DETA), 3-aminopropyltrimethoxysilane (APTMS) and tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2583fdb54ed0a0382cee2d62ccc332ce
https://doi.org/10.1016/j.apsusc.2019.01.088
https://doi.org/10.1016/j.apsusc.2019.01.088
Autor:
E. S. Gornev, G. S. Teplov
Publikováno v:
Russian Microelectronics. 48:131-142
We describe a bipolar memristor in the Verilog-A language. The proposed model concepts take into account the following parameter deviations in the memristor switching between conduction states: the variation of the conduction parameters in the highly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::146c5930a5c69ee226114a10c8b6b6eb
https://doi.org/10.1134/s1063739719030107
https://doi.org/10.1134/s1063739719030107
Autor:
Igor A. Karateev, Gennady Krasnikov, Dmitiry Negrov, Yury Matveyev, Maksim Zhuk, Andrei Zenkevich, Sergei Zarubin, E. S. Gornev
Publikováno v:
Frontiers in Neuroscience
Frontiers in Neuroscience, Vol 14 (2020)
Frontiers in neuroscience 14, 94 (2020). doi:10.3389/fnins.2020.00094
Frontiers in Neuroscience, Vol 14 (2020)
Frontiers in neuroscience 14, 94 (2020). doi:10.3389/fnins.2020.00094
Frontiers in neuroscience 14, 94 (2020). doi:10.3389/fnins.2020.00094
The development of highly integrated electrophysiological devices working in directcontact with living neuron tissue opens new exciting prospects in the fields ofneurophysiolo
The development of highly integrated electrophysiological devices working in directcontact with living neuron tissue opens new exciting prospects in the fields ofneurophysiolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::934d9424f67d8c8c6d719a93cf345eab
http://europepmc.org/articles/PMC7055297
http://europepmc.org/articles/PMC7055297
Autor:
A. V. Myakon’kikh, O. P. Guschin, A. A. Tatarintsev, K. Yu. Kuvaev, E. S. Gornev, Konstantin V. Rudenko, N. A. Orlikovskii
Publikováno v:
Russian Microelectronics. 47:323-331
The processes of plasma etching of stack layers to form a structure of a metal gate of a nanoscale transistor with a dielectric with a high level of dielectric permittivity (HkMG) are investigated. A resist mask formed by fine-resolution electron-bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6958bf596b9b1b5a7da9d4485c05b630
https://doi.org/10.1134/s1063739718050062
https://doi.org/10.1134/s1063739718050062