Zobrazeno 1 - 10
of 41
pro vyhledávání: '"E. Ruland"'
Publikováno v:
JGZ Tijdschrift voor jeugdgezondheidszorg. 53:98-103
Inleiding: Doel van het onderzoek was inzicht krijgen in het effect van de invoering van een digitaal afsprakenportaal op de opkomst en het bereik van 0‑ tot 4‑jarigen bij de jeugdgezondheidszorg. Methode: Het betreft een retrospectief cohortonde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::927310d9584d958c466326427e2c1532
https://doi.org/10.1007/s12452-021-00258-3
https://doi.org/10.1007/s12452-021-00258-3
Publikováno v:
JGZ Tijdschrift voor jeugdgezondheidszorg. 53:30-36
Inleiding: Schoolverzuim is een gezondheidsvraagstuk omdat het negatieve effecten heeft op onder meer de gezondheid en het welbevinden van jongeren. Leerplicht en recht op onderwijs moeten dit tegengaan. Desondanks wordt schoolverzuim niet goed zicht
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b32b8ca0bb4faed9ef833fc0d4b14b7
https://doi.org/10.1007/s12452-021-00252-9
https://doi.org/10.1007/s12452-021-00252-9
Autor:
Gary E. Ruland, P. L. Bonanno, Xueping Xu, Stanislav Stoupin, Hrishikesh Das, Varatharajan Rengarajan, Nadeemullah A. Mahadik, Robert E. Stahlbush
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
Lattice distortions (LD) in 4H-silicon carbide (SiC) wafers were quantified using synchrotron X-ray rocking curve mapping (RCM), and were resolved into their two components of lattice strain (Δd/d) and lattice plane curvature (LPC) for 150 mm diamet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27876c87fda959f0d7cc17089e23a708
http://link.springer.com/article/10.1038/s41598-020-67900-y
http://link.springer.com/article/10.1038/s41598-020-67900-y
Autor:
Varathajan Rengarajan, Xueping Xu, Gary E. Ruland, Angelo Alberto Messina, Ilya Zwieback, M. Musolino, Hui Wang, Danilo Crippa, Michele Calabretta, Marco Mauceri
Publikováno v:
Materials Science in Semiconductor Processing. 135:106088
In recent years, the power electronics industry based on silicon carbide (SiC) has rapidly expanded, but suppliers are struggling to meet the market demand both for final devices and for the starting raw material, which nowadays consists of SiC wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7f64f5d5ad1d37cdb077ffbe89cce92
https://doi.org/10.1016/j.mssp.2021.106088
https://doi.org/10.1016/j.mssp.2021.106088
Autor:
Gary E. Ruland, Eugene A. Imhoff, Robert E. Stahlbush, Nadeemullah A. Mahadik, Chaffra A. Affouda, Marko J. Tadjer
Publikováno v:
Materials Science Forum. 858:233-236
Basal Plane Dislocations (BPD) intersecting the SiC substrate surface were converted to threading edge dislocations (TED) by high temperature annealing of the substrates in the temperature range of 1750 °C – 1950 °C. Successively, epitaxial growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5576b5e3b9c463db02d0d5fe0480f3dd
https://doi.org/10.4028/www.scientific.net/msf.858.233
https://doi.org/10.4028/www.scientific.net/msf.858.233
Autor:
M. van Blankers, Jolanda Keijsers, K. van der Velden, H. van Oers, M. van Bon, E. Ruland, P. Uniken Venema, Henriëtte Treurniet
Publikováno v:
TSG Tijdschrift voor Gezondheidsweenschappen, 3, 95, 98-99
In 2011 schreef Hans Boutellier, bijzonder hoogleraar Veiligheid en Burgerschap aan de Vrije Universiteit een boek, getiteld De improvisatiemaatschappij [1]. Hij laat daarin zien hoe politiek, overheid en publieke sector in de afgelopen tien jaar voo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad4cdad8eece8abe44296fba12c82d20
http://resolver.tudelft.nl/uuid:e7d35bae-df73-488d-9324-bc45e4da9bdf
http://resolver.tudelft.nl/uuid:e7d35bae-df73-488d-9324-bc45e4da9bdf
Autor:
Gary E. Ruland, Balaji Raghothamachar, Michael Dudley, Fangzhen Wu, A. Souzis, Ping Wu, Ilya Zwieback, S. Byrappa, Thomas Anderson, Huanhuan Wang
Publikováno v:
Journal of Crystal Growth. 401:423-430
Synchrotron White Beam X-ray Topography (SWBXT) has been used to image and analyze a distinctive stacking fault pattern observed in 4H-SiC wafers. The pattern often consists of a six-pointed star comprised of multiple layers of rhombus-shaped stackin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac61e11589633cae920a1f2e82422d14
https://doi.org/10.1016/j.jcrysgro.2014.01.078
https://doi.org/10.1016/j.jcrysgro.2014.01.078
Autor:
Ping Wu, A. Gupta, Gary E. Ruland, Mark Ramm, Varatharajan Rengarajan, Ilya Zwieback, Xueping Xu
Publikováno v:
ECS Transactions. 64:27-33
Large SiC single crystals, semi-insulating and n-type, up to 150mm in diameter are grown by II-VI Incorporated. In addition to the recent product launch of 150mm substrates, significant improvements have been made in crystal quality. The values of FW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a29211f45b19157e594a27f585954d13
https://doi.org/10.1149/06407.0027ecst
https://doi.org/10.1149/06407.0027ecst
Publikováno v:
European Journal of Public Health. 26
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b528465fb92eb97f873952fc13f2f770
https://doi.org/10.1093/eurpub/ckw170.049
https://doi.org/10.1093/eurpub/ckw170.049
Autor:
Gary E. Ruland, J. D. Bhawalker, P. N. Prasad, Bruce A. Reinhardt, Nilima Dinesh Kumar, Upvan Narang, Raz Gvishi
Publikováno v:
Chemistry of Materials. 7:2199-2202
The authors prepared nanostructured composite materials via sol-gel methods where doping of either C{sub 60} or bisbenzothiazole 3,4-didecyloxythiophene (BBTDOT) was employed. A multiphasic composite glass doped with both C{sub 60} and BBTDOT display
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea837d49f81327fc128c0f988bd7499
https://doi.org/10.1021/cm00059a031
https://doi.org/10.1021/cm00059a031