Zobrazeno 1 - 10
of 29
pro vyhledávání: '"E. Robilliart"'
Autor:
R.A. Bianchi, E. Robilliart, G. Reimbold, C. Raynaud, C. Gallon, R. Gwoziecki, Gerard Ghibaudo, H. Dansas, S. Orain
Publikováno v:
IEEE Transactions on Electron Devices. 51:1254-1261
This paper presents an electrical analysis of mechanical stress induced by shallow trench isolation (STI) on MOSFETs of advanced 0.13 /spl mu/m bulk and silicon-on-insulator (SOI) technologies. By applying external calibrated stress, we present piezo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653d5c5839dbbb23a2c87223df0bccb0
https://doi.org/10.1109/ted.2004.831358
https://doi.org/10.1109/ted.2004.831358
Publikováno v:
Microelectronics Reliability. 41:1031-1034
In this study, body effect influence on oxide degradation is analyzed. It is found that the negative bias polarization on the n-well of a p-channel MOS transistor may induce a significant reduction of the oxide lifetime as well as an increase of stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::322c641f0fe6f95afc3bd999a65d1be5
https://doi.org/10.1016/s0026-2714(01)00065-8
https://doi.org/10.1016/s0026-2714(01)00065-8
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:132-135
This paper proposes a new method to determine the base resistance components and the base sheet resistance under forward bias conditions and in the presence of current crowding. Using bipolar transistors with two independent base contacts, the base s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::953be6a793a490556c88b9e67b010827
https://doi.org/10.1109/4.485876
https://doi.org/10.1109/4.485876
Autor:
E. Robilliart, Emmanuel Dubois
Publikováno v:
IEEE Electron Device Letters. 23:43-45
A fast one-dimensional (1-D) numerical model suitable for circuit analysis has been developed for fully-depleted silicon-on-insulator MOSFETs. The novel important feature of our CAD-oriented approach consists in a rigorous treatment of the nonquasist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1dc9ed7709bd23f51e9f51a18d4cad
https://doi.org/10.1109/55.974807
https://doi.org/10.1109/55.974807
Autor:
E. Robilliart, E. Dubois
Publikováno v:
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).
Accurate modeling of static currents, conductance and charge dynamics are essential for the design of digital and specially for analog circuits. In the analog domain, the shortcomings of many modeling approaches often originate from transistors biase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e30f733d2ffd78ee56737495ebc5e93b
https://doi.org/10.1109/sispad.1996.865328
https://doi.org/10.1109/sispad.1996.865328
TCAD modelling of PLAD implantations and application to sub-65nm technological nodes [plasma doping]
Autor:
Steven R. Walther, Ukyo Jeong, A. Dray, E. Robilliart, Damien Lenoble, D. Villanueva, F. Lallement, S. Mehta, Herve Jaouen, E. Balossier, L. Vet, A. Grouillet, F. Salvetti
Publikováno v:
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).
Plasma doping (PLAD) is an ion implantation technique under investigation to realize ultra-shallow junctions for 65 nm nodes and beyond. This technique has been modelled and is integrated in TCAD process simulation tools. The most influential paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac31380503a781eaa904a8f6ace11087
https://doi.org/10.1109/essder.2004.1356575
https://doi.org/10.1109/essder.2004.1356575
Autor:
G. Lecarval, Sylvain Barraud, D. Villanueva, Herve Jaouen, E. Fuchs, Philippe Dollfus, E. Robilliart
Publikováno v:
Simulation of Semiconductor Processes and Devices 2004 ISBN: 9783709172124
For fast computation of drain current in Nano-MOSFET, we have developed a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel. The main elements of this model are deduced from c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1757b0a1f318cac7124444d63bedc075
https://doi.org/10.1007/978-3-7091-0624-2_58
https://doi.org/10.1007/978-3-7091-0624-2_58
Publikováno v:
International Conference on Microelectronic Test Structures, 2003..
The impact of the gate leakage current on long MOS transistor characterization is investigated in this paper. Particularly for first order parameter extraction, a new method is proposed here to rid the gate current on advanced technologies with thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2806b6362e2b400355c44c234c7bd76
https://doi.org/10.1109/icmts.2003.1197433
https://doi.org/10.1109/icmts.2003.1197433
Publikováno v:
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..
Since the junctions in the most advanced CMOS devices are thinner and thinner, the influence of the surface of silicon is thus becoming significant on dopant diffusion. In this paper, based on experimental data, a methodology for calibration is propo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e901c97846fd076580183a6f9bcb611
https://doi.org/10.1109/sispad.2003.1233660
https://doi.org/10.1109/sispad.2003.1233660
Autor:
E. Dubois, E. Robilliart
Publikováno v:
1996 IEEE International SOI Conference Proceedings.
A one-dimensional CAD-oriented SOI MOSFET model continuous over all regions of operation is described. This model is valid for long and short channel fully depleted devices. In addition, the NQS nature of the charge redistribution is implicitly accou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c5a6888a8b8a3e87035f1b184a7ead2
https://doi.org/10.1109/soi.1996.552470
https://doi.org/10.1109/soi.1996.552470