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Autor:
A. Chávez-Chávez, A. Martínez-Benítez, I. Ceja-Andrade, E. R. Moreno-Close, M. A. Santana-Aranda, M. Meléndez-Lira, J.G. Quiñones-Galván, A. Pérez-Centeno
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:4611-4617
The optimal conditions for the growth of HgS films through the chemical bath deposition technique, using iodine as a complexing agent, are explored here, which has potential in semiconducting devices, for a diversity of applications. Some concentrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6633668cfe0824e072ea9ba9f659fd9d
https://doi.org/10.1007/s10854-020-03013-6
https://doi.org/10.1007/s10854-020-03013-6
