Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E. R. Lin'kova"'
Autor:
D. O. Filatov, V. Ya. Aleshkin, I. A. Karpovich, B. N. Zvonkov, E. R. Lin’kova, I. G. Malkina
Publikováno v:
Semiconductors. 31:941-946
The capacitive photovoltage and photoconductivity spectra of GaAs/InAs heterostructures with quantum dots is discussed. For these structures, which were fabricated by metallorganic gas-phase epitaxy, the photosensitivity spectrum has a sawtoothed sha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c152171468b40f632cde21227360458
https://doi.org/10.1134/1.1187139
https://doi.org/10.1134/1.1187139
Autor:
V. I. Gavrilenko, V. Ya. Aleshkin, A. V. Antonov, E. A. Uskova, A. A. Andronov, B. N. Zvonkov, I. G. Malkina, E. R. Lin’kova, N. A. Bekin, Dmitry G. Revin
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 64:520-524
The infrared radiation from hot holes in InxGa1−x As/GaAs heterostructures with strained quantum wells during lateral transport is investigated experimentally. It is found that the infrared radiation intensities are nonmonotonic functions of the el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75d8ed828de14d2fa8ae3deee48980bf
https://doi.org/10.1134/1.567228
https://doi.org/10.1134/1.567228
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 63:439-443
Changes in the photoluminescence spectra and photoelectric phenomena at the transition from layered to three-dimensional growth with the formation of quantum dots were traced in samples with continuously increasing effective thickness of the strained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2280cddddc2dc192b8df950ea59d9077
https://doi.org/10.1134/1.567045
https://doi.org/10.1134/1.567045
Publikováno v:
Quantum Electronics. 26:682-684
Semiconductor injection lasers with a trapezoidal active region were made and investigated. The results demonstrated that this configuration of the active region could result in the formation of a narrow angular distribution of the laser radiation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94c6d287be07941f136a96dcbdf109d1
https://doi.org/10.1070/qe1996v026n08abeh000754
https://doi.org/10.1070/qe1996v026n08abeh000754
Autor:
V. Ya. Aleshkin, A. E. Zhukov, Aleksandr A Andronov, Sergey V. Zaitsev, N. A. Bekin, A. F. Tsatsul’nikov, E. R. Lin’kova, A. V. Antonov, P. S. Kop’ev, Dmitry G. Revin, M. V. Maksimov, B. N. Zvonkov, D.L. Foulger, V. M. Starodub, N. F. Starodub, Peter Michael Smowton, S. P. Dikij, N. N. Ledentsov, N. Yu. Gordeev, Leonid L. Fedorenko, V. I. Gavrilenko, E. A. Uskova, A. Yu. Egorov, A. R. Kovsh, Peter Blood, I. G. Malkina, V. M. Ustinov
Publikováno v:
Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices ISBN: 9789048149643
Many of the attractions of quantum wells in lasers derive from the properties of the density of states function of the two-dimensional electron system. The abrupt edge of the density of states as a function of energy provides a very high differential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::402296b5aa495a22d343ce7215cf4282
https://doi.org/10.1007/978-94-015-8965-9_2
https://doi.org/10.1007/978-94-015-8965-9_2
