Zobrazeno 1 - 10
of 35
pro vyhledávání: '"E. R. Gertner"'
Publikováno v:
Journal of Electronic Materials. 24:617-624
Extrinsic p-type doping of long wavelength infrared-HgCdTe double layer heterostructure for p-on-n device application requires good control of the p-type dopant, regardless of the doping technique. The approach is to place the electrical junction ahe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7145c5369df9d7800621b444699ca5ca
https://doi.org/10.1007/bf02657970
https://doi.org/10.1007/bf02657970
Publikováno v:
Semiconductor Science and Technology. 8:S270-S275
The authors have fabricated p-on-n LWIR HgCdTe diodes by extrinsically doping a double-layer heterostructure grown by metalorganic chemical vapour deposition (MOCVD) using the interdiffused multilayer process (IMP) on GaAs substrates. The p-side of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b7795f0f3f45ad944e9fac4fa775fd
https://doi.org/10.1088/0268-1242/8/1s/059
https://doi.org/10.1088/0268-1242/8/1s/059
Autor:
L. D. Bell, R.L. Pierson, R. P. Smith, B. T. McDermott, Gerard Sullivan, E. R. Gertner, R. Pittman
Publikováno v:
Applied Physics Letters. 76:1725-1727
Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1ee443ab28dc1a885c65ea7434b7a31
https://doi.org/10.1063/1.126148
https://doi.org/10.1063/1.126148
Publikováno v:
Semiconductor Science and Technology. 6:C15-C21
The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156fffad394873dfa472ac37e389d98b
https://doi.org/10.1088/0268-1242/6/12c/004
https://doi.org/10.1088/0268-1242/6/12c/004
Autor:
E. R. Gertner, Robert B. Bailey, D. D. Edwall, M.B. Gubala, D.Q. Bui, Kadri Vural, Lester J. Kozlowski, A.B. Vanderwyck, J. Chen, R. V. Gil
Publikováno v:
IEEE Transactions on Electron Devices. 38:1104-1109
Hybrid HgCdTe 256*256 focal plane arrays have been developed to meet the sensitivity, resolution, and field-of-view requirements of high-performance medium-wavelength infrared (MWIR) imaging systems. The detector arrays for these hybrids are fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0e2a0252ed48414506c8a19e4690fb5
https://doi.org/10.1109/16.78385
https://doi.org/10.1109/16.78385
Publikováno v:
Semiconductor Science and Technology. 5:S221-S224
The authors compare the material properties of conventional- and interdiffused-grown layers of Hg1-xCdxTe/GaAs grown by metalorganic chemical vapour deposition (MOCVD). These results are also compared with those of state-of-the-art LPE HgCdTe/CdZnTe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f093461195250866392b7ad5ad72eab9
https://doi.org/10.1088/0268-1242/5/3s/049
https://doi.org/10.1088/0268-1242/5/3s/049
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1045-1048
Layers of epitaxial Hg1−xCdxTe have been grown by metalorganic chemical vapor deposition (MOCVD) on GaAs/Si substrates. Data is presented on surface morphology, compositional uniformity, double crystal x‐ray diffraction, chemical defect etching,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f16ca4a526ec7621a5362edffc0d4e8d
https://doi.org/10.1116/1.576959
https://doi.org/10.1116/1.576959
Autor:
J. G. Pasko, M. Zandian, E. R. Gertner, Roger E. DeWames, Jasprit Singh, Jose M. Arias, Donald E. Cooper, S. H. Shin
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1025-1033
In this paper we report on p‐type arsenic doping of CdTe and HgTe/CdTe superlattices by photoassisted and conventional molecular‐beam epitaxy (MBE). We also report on some of the problems involved in doping and growing the HgTe/CdTe superlattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::104b64aed5a2848f5c7df9528aaa0994
https://doi.org/10.1116/1.577000
https://doi.org/10.1116/1.577000
Publikováno v:
Semiconductor Science and Technology. 5:S45-S48
Low-leakage high-performance photovoltaic detectors were fabricated from long-wavelength infrared (LWIR) HgCdTe epitaxial material grown by metal-organic chemical vapour deposition (MOCVD) on GaAs substrates. Layers were grown by two different MOCVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74ae249ad778ab9bd1a385b097bc1a0c
https://doi.org/10.1088/0268-1242/5/3s/011
https://doi.org/10.1088/0268-1242/5/3s/011
Autor:
R. Pittman, E. R. Gertner, L. D. Bell, B. T. McDermott, R.L. Pierson, R. P. Smith, Gerard Sullivan
Publikováno v:
Applied Physics Letters. 72:1590-1592
Ballistic-electron-emission microscopy (BEEM) spectroscopy and imaging have been applied to the Au/GaN interface. In contrast to previous BEEM measurements, spectra yield a Schottky barrier height of 1.04 eV that agrees well with the highest values m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27ee2fcaf367a3fd3c12d9986e3ad40
https://doi.org/10.1063/1.121124
https://doi.org/10.1063/1.121124