Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E. R. Evarts"'
Autor:
J. A. Currivan-Incorvia, S. Siddiqui, S. Dutta, E. R. Evarts, J. Zhang, D. Bono, C. A. Ross, M. A. Baldo
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Ferromagnetic nanowires act as conduits for magnetic domain walls which may in principle be used to encode and propagate information. Here, the authors present current-based nanowire domain wall logic prototypes with operational properties required f
Externí odkaz:
https://doaj.org/article/d30b8a01f80a4402b3d6eeda2c8db90f
Autor:
Virat Mehta, Devika Sil, V. Katragadda, E. R. Evarts, J. DeBrosse, Sanjay Mehta, Richard G. Southwick, C. Long, Abraham Arceo, Dominik Metzler, Theodorus E. Standaert, A. Gasasira, C.-C. Yang, Son Nguyen, Raghuveer R. Patlolla, P. Nieves, D. Houssameddine, E. R. J. Edwards, V. Pai, Thomas M. Maffitt, Daniel C. Worledge, Michael Rizzolo, James Chingwei Li, O. van der Straten, J. Fullam, J. Morillo, Yaocheng Liu, Heng Wu, R. Johnson, Chu Isabel Cristina, J. M. Slaughter, T. Levin, S. McDermott, R. Pujari, Guohan Hu, James J. Demarest, Daniel C. Edelstein, Ashim Dutta, Yutaka Nakamura, M. Iwatake, M.R. Wordeman
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present the first Embedded Spin-Transfer-Torque MRAM (eMRAM) technology in a 14 nm CMOS node. A novel integration supports the highest eMRAM density (0.0273 um2 cell size), optimal magnetic tunnel junction (MTJ) placement between M1-M2 for perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd1db9bbbe44a73b965abe369e8b585
https://doi.org/10.1109/iedm13553.2020.9371922
https://doi.org/10.1109/iedm13553.2020.9371922
Autor:
Nathan P. Marchack, E. R. Evarts, Philip L. Trouilloud, Gen P. Lauer, B. Doris, Thitima Suwannasiri, Qing He, E. J. O'Sullivan, Daniel C. Worledge, S. L. Brown, Jonathan Z. Sun, D. Edelstein, Matthias Georg Gottwald, B. Khan, R. P. Robertazzi, Y. Zhu, Pouya Hashemi, J.H. Park, Guohan Hu, M. Reuter, Janusz J. Nowak, Kothandaraman Chandrasekharan, Yohan Kim
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We report the impact of four key parameters on switching efficiency of STT-MRAM devices with perpendicular magnetic anisotropy: device size, device resistance-area product (RA), blanket film Gilbert damping constant (a), and process temperature. Perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2664742d6137f57c18fd3fb422fa7f0
https://doi.org/10.1109/iedm.2017.8268515
https://doi.org/10.1109/iedm.2017.8268515
Autor:
Saima Afroz Siddiqui, David Bono, E. R. Evarts, Jinshuo Zhang, Jean Anne Currivan-Incorvia, Caroline A. Ross, Sumit Dutta, Marc A. Baldo
Publikováno v:
Nature Communications
Nature Publishing Group
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Nature Publishing Group
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50c3784fe727c1e7290f41121f9b1f50
http://europepmc.org/articles/PMC4729928
http://europepmc.org/articles/PMC4729928
Autor:
Sumit Dutta, Marc A. Baldo, E. R. Evarts, Jean Anne Currivan-Incorvia, Saima Afroz Siddiqui, Caroline A. Ross
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We present a prototype of a switch that encodes information in the position of a magnetic domain wall (DW) in a ferromagnetic wire. The information is written using spin transfer torque and/or spin hall effect and read out using a magnetic tunnel jun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0bf590249dd178c59ac2b3e5be065b4
https://doi.org/10.1109/iedm.2015.7409817
https://doi.org/10.1109/iedm.2015.7409817