Vertically stacked non-volatile memory devices – material considerations

Autor: Łukasz Wachnicki, Grazia Tallarida, Rafal Jakiela, S. Yatsunenko, Tomasz A. Krajewski, N. Huby, P. Kruszewski, Elzbieta Guziewicz, A. Wójcik-Głodowska, Jacek Szade, Krzysztof Kopalko, Marek Godlewski, S. Ferrari, E. Przedziecka

Publikováno v: Microelectronic engineering 85 (2008): 2434–2438.
info:cnr-pdr/source/autori:Godlewski, M; Guziewicz, E; Szade, J; Wojcik-Glodowska, A; Wachnicki, L; Krajewski, T; Kopalko, K; Jakiela, R; Yatsunenko, S; Przezdziecka, E; Kruszewski, P; Huby, N; Tallarida, G; Ferrari, S/titolo:Vertically stacked non-volatile memory devices-material considerations/doi:/rivista:Microelectronic engineering/anno:2008/pagina_da:2434/pagina_a:2438/intervallo_pagine:2434–2438/volume:85

Properties of ZnO films grown by atomic layer deposition at low temperature are described. By selecting appropriate precursors and their pulses we obtained films with controlled electrical properties - from heavily n-type to p-type. Parameters of con

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd105cf9654340806b5168af9ba38014
https://doi.org/10.1016/j.mee.2008.09.012