Zobrazeno 1 - 10
of 44
pro vyhledávání: '"E. Pougeoise"'
Autor:
R. Hamelin, S. Poncet, A. Chelnokov, N. Dunoyer, C. Rossat, Ph. Duvaut, E. Pougeoise, Jean-Michel Gérard, Ph. Grosse, Laurent Grenouillet, Ph. Gilet
Publikováno v:
physica status solidi c. 3:395-398
We have processed 1.3 µm range InAs quantum dot oxide confined vertical cavity surface emitting lasers with top distributed Bragg reflectors contacts, all on GaAs substrate. Our devices exhibit acceptable parameters for 10 Gigabit Ethernet standards
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c97febcc7aeee8ae27323889ba5c8a43
https://doi.org/10.1002/pssc.200564159
https://doi.org/10.1002/pssc.200564159
Autor:
Bruno Daudin, J. Garcia, Guy Feuillet, G. Tourbot, Philippe Gilet, A.-L. Bavencove, E. Pougeoise, B. Gayral, Le Si Dang, F. Levy, B. André
Publikováno v:
physica status solidi (a). 207:1425-1427
We studied and improved gallium nitride (GaN) nanowire (NW) based light emitting diodes (LEDs). PIN nanodiodes with and without InGaN/GaN multiple quantum wells (MQWs) were grown by molecular beam epitaxy (MBE) under N-rich conditions on n-doped Si(1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b98cc9fc6a2881c217f7242977b82c26
https://doi.org/10.1002/pssa.200983603
https://doi.org/10.1002/pssa.200983603
Autor:
Gilles Lerondel, J. S. Bouillard, L. Grenouillet, Alexei Chelnokov, Renaud Bachelot, E. Pougeoise, Sylvain Blaize, S. Vilain, Pascal Royer, Jean-Michel Gérard, Jesper Berggren, Ph. Gilet, P. Sundgren, Mattias Hammar, Regis Hamelin, Philippe Grosse
Publikováno v:
IEEE Photonics Technology Letters. 21:377-379
We present an experimental study of the main modes involved in the emission properties of InGaAs-GaAs quantum-well oxide-confined long wavelength vertical-cavity surface-emitting lasers. Lasing properties are dominated by the so-called "oxide modes"
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c578bacef28f0117cbf2b542edc3984
https://doi.org/10.1109/lpt.2008.2012170
https://doi.org/10.1109/lpt.2008.2012170
Autor:
Jean-Michel Gérard, R. Stevens, Ph. Gilet, Ph. Grosse, E. Pougeoise, Jesper Berggren, L. Grenouillet, A. Chelnokov, Petrus Sundgren, S. Poncet, Mattias Hammar, Regis Hamelin, Nicolas Olivier
Publikováno v:
SPIE Proceedings.
In this article, we report our results on 1.3IŒm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9164c932add78d6a823569845ba59981
https://doi.org/10.1117/12.700403
https://doi.org/10.1117/12.700403
Autor:
A. Chelnokov, N. Olivier, E. Pougeoise, Laurent Fulbert, Philippe Grosse, S. Poncet, L. Grenouillet, Philippe Gilet, P. Philippe, P. Duvaut
Publikováno v:
SPIE Proceedings.
In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3 μm are key components in this field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e269cc3b60425afcfafe7f0b2616b494
https://doi.org/10.1117/12.692829
https://doi.org/10.1117/12.692829
Autor:
R. Stevens, Petrus Sundgren, Renaud Bachelot, S. Vilain, Ph. Grosse, E. Pougeoise, Gilles Lerondel, J. S. Bouillard, S. Poncet, G. Bourgeois, Mattias Hammar, Pascal Royer, Regis Hamelin, Jesper Berggren, A. Chelnokov, Ph. Gilet, Jean-Michel Gérard
Publikováno v:
SPIE Photonics Europe
SPIE Photonics Europe, 2006, Strasbourg, France. pp.61850U, ⟨10.1117/12.662118⟩
SPIE Photonics Europe, 2006, Strasbourg, France. pp.61850U, ⟨10.1117/12.662118⟩
International audience; In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88831ab33968a3c7d151413bf7f81722
https://hal-utt.archives-ouvertes.fr/hal-02495762
https://hal-utt.archives-ouvertes.fr/hal-02495762
Autor:
S. Poncet, Regis Hamelin, R. Stevens, A. Chelnokov, E. Pougeoise, Jesper Berggren, Philippe Gilet, Mattias Hammar, Petrus Sundgren, Jean-Michel Gérard, G. Bourgeois, Philippe Grosse
Publikováno v:
Electronics Letters. 42:584
Results on strained InGaAs quantum well vertical cavity surface emitting lasers for optical interconnection applications are reported. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610717472d118e4e5cfe9b6059359fee
https://doi.org/10.1049/el:20060060
https://doi.org/10.1049/el:20060060
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