Zobrazeno 1 - 10
of 2 310
pro vyhledávání: '"E. Poles"'
Autor:
Huang, Ke1,2,3 (AUTHOR) kehuang@scsio.ac.cn, Huang, Bohua4 (AUTHOR), Wang, Dongxiao5 (AUTHOR) dxwang@mail.sysu.edu.cn, Zhao, Xia6 (AUTHOR), Zhang, Lianyi1 (AUTHOR), Liang, Zhanlin1 (AUTHOR), Wu, Ying7 (AUTHOR), Yang, Lei1 (AUTHOR), Wang, Weiqiang1 (AUTHOR)
Publikováno v:
Climate Dynamics. Mar2024, Vol. 62 Issue 3, p2017-2040. 24p.
Autor:
Novello, M., Hartmann, A. E. S.
Publikováno v:
Gravitation & Cosmology; Jul2021, Vol. 27 Issue 3, p221-225, 5p
Publikováno v:
The Journal of Physical Chemistry B. 102:6193-6201
Interfacial electron-transfer dynamics have been characterized for a heterogeneous semiconductor−liquid junction. Molecular beam epitaxy was used to grow As-capped GaAs (100) surface quantum wells. Removal of the As layer created a pristine, low de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4f171e9ee7bdf2c604cea303fda095e
https://doi.org/10.1021/jp981341q
https://doi.org/10.1021/jp981341q
Publikováno v:
Semiconductor Science and Technology. 12:1252-1256
Super-bandgap time-resolved photoluminescence is used to measure the transport properties of a degenerate electron - hole gas in InP. It is found that the luminescence decay at energies above the energy gap is governed by the shift of the electron qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddd256ff568699341f7132063e5e2ede
https://doi.org/10.1088/0268-1242/12/10/012
https://doi.org/10.1088/0268-1242/12/10/012
Publikováno v:
Journal of Applied Physics. 80:5129-5137
Super band‐gap time‐resolved photoluminescence is employed to measure the transport properties of degenerate electron–hole gas in thin GaAs epilayers. It is found that the luminescence decay at wavelengths shorter then the energy gap wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::549e420bb63ec3fec4da53729e7fec49
https://doi.org/10.1063/1.363494
https://doi.org/10.1063/1.363494
Publikováno v:
Applied Surface Science. 106:457-465
Time resolved photoluminescence (TRPL) is employed to study photogenerated electron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37e26ce7cb6612448ca05409c4bc20cb
https://doi.org/10.1016/s0169-4332(96)00413-8
https://doi.org/10.1016/s0169-4332(96)00413-8
Publikováno v:
Journal of Applied Physics. 86:3481-3483
One of the most widely used methods to measure the excess carrier temperature in semiconductors is super band gap time-resolved photoluminescence. We find that under high carrier injection levels the formalism commonly used to extract the electron te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db16befb60c9b699f95e57609adc18e8
https://doi.org/10.1063/1.371235
https://doi.org/10.1063/1.371235
Publikováno v:
Applied Physics Letters. 73:1400-1402
We present a study of time-resolved photoluminescence (TRPL) measurements of n-type CdTe single crystals doped by a novel procedure. The measurements show that the surface recombination velocity of low doped n-type (n0=1.5×1016 cm−3) samples was b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::588ed6ce2b99dcca314a08be0e52a0c9
https://doi.org/10.1063/1.122169
https://doi.org/10.1063/1.122169
Autor:
Jiang, Jilan1 (AUTHOR), Xu, Kang2 (AUTHOR), Liu, Yimin1,3 (AUTHOR) lym@lasg.iap.ac.cn, Wang, Weiqiang2 (AUTHOR), Wu, Guoxiong1,3 (AUTHOR)
Publikováno v:
Climate Dynamics. Mar2024, Vol. 62 Issue 3, p1909-1923. 15p.
Autor:
Gavazov, Blagovest K.1 (AUTHOR) blagovest.gavazov@mu-plovdiv.bg, Gavazov, Kiril B.2 (AUTHOR) kiril.gavazov@mu-plovdiv.bg
Publikováno v:
Chemistry-Didactics-Ecology-Metrology. Dec2023, Vol. 28 Issue 1/2, p39-55. 17p.