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Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

Autor: Wilfried Desrat, Nicolas Camara, Narcis Mestres, Phillippe Godignon, C. Consejo, Jean Camassel, Benoit Jouault, A. Caboni, E. Pausas, B. Jabakhanji

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2010, 97, pp.093107. ⟨10.1063/1.3480610⟩

Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21dcc5994a23f335ac74c8d259ae78ac
https://hal.archives-ouvertes.fr/hal-00543281

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Rapid Thermal Oxynitridation and Hydrogenation of 3C-SiC∕Si using N[sub 2]O and H[sub 2] Ambient

Autor: A. Constant, P. Godignon, A. Caboni, E. Pausas, G. Ferro, Gabriel Ferro, Paul Siffert

Publikováno v: AIP Conference Proceedings.

The electrical properties of SiO2/3C‐SiC structures fabricated by rapid thermal processing (RTP) using oxynitridation and hydrogenation processes have been examined. It is shown that the growth of the SiO2 films in a RTP chamber is one order of mag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e1502152b304d5ca98099e35a47370c0
https://doi.org/10.1063/1.3518313

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Capacitive and Resistive RF-MEMS switches 2.5D & 3D Electromagnetic and Circuit Modelling

Autor: S. Aouba, M.A. Llamas, David Girbau, Flavio Giacomozzi, Robert Plana, Lluis Pradell, V. Puyal, E. Pausas, S. Colpo, Patrick Pons, C. Villeneuve

Publikováno v: 2009 Spanish Conference on Electron Devices.

In this paper proposes different strategies for the electrical modelling of capacitive and resistive RF-MEMS switches which take into account the dependence of the electrical performance on the mechanical properties and technological processes. The E

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::857f8261ee861830db08dc501b5ecbaf
https://doi.org/10.1109/sced.2009.4800531

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Deposited Thin SiO[sub 2] for Gate Oxide on n-Type and p-Type GaN

Autor: Phillippe Godignon, E. Pausas, I. Cortes, Marcel Placidi, A. Fontserè, M. Zabala, R. Pérez, Amador Pérez-Tomás, A. Constant, Narcis Mestres, José Antonio Alloza Millán, Yvon Cordier

Publikováno v: Journal of The Electrochemical Society. 157:H1008

Here, we report on a comparison of two different methods to achieve thin SiO 2 deposited layers for gate oxide on n- and p-type GaN by using plasma-enhanced chemical vapor deposition with silane (SiH 4 ) and tetraethyl orthosilicate (Si[OC 2 H5] 4 )

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32165aaded0cd4a25ce5ab9af45fb39b
https://doi.org/10.1149/1.3486091

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