Zobrazeno 1 - 10
of 166
pro vyhledávání: '"E. Papis"'
Autor:
E. Papis-Polakowska, J. Kaniewski, J. Jurenczyk, A. Jasik, K. Czuba, A. E. Walkiewicz, J. Szade
Publikováno v:
AIP Advances, Vol 6, Iss 5, Pp 055206-055206-7 (2016)
The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force
Externí odkaz:
https://doaj.org/article/6e90ff87ef8342fa93daca4b7cd07fd0
Publikováno v:
Italian Journal of Animal Science, Vol 4, Iss 2s, Pp 568-570 (2010)
The modern technologies used in aquaculture may improve fish production and quality and, at the same time, reduce environmental impact with benefits on the public perception of the industry. To be economically profitable, these modern technologies re
Externí odkaz:
https://doaj.org/article/6f0c8c08310743a88ba866f7c2484b46
Autor:
Tomasz Martyński, Andrzej Łapiński, Jarosław Makowiecki, Iwona Sankowska, E. Papis-Polakowska, Krzysztof Czuba, J. Kaniewski, P. Karbownik, Agata Jasik, Tomasz Runka
Publikováno v:
Applied Physics B. 125
The innovative two-step passivation by octadecanethiol (ODT) self-assembled monolayers (SAMs) and the following silicon dioxide (SiO2) deposition was used for the type-II InAs/GaSb superlattice photodetector. To understand the mechanism of passivatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9aa585011e08578934208501322b71d
https://doi.org/10.1007/s00340-019-7336-3
https://doi.org/10.1007/s00340-019-7336-3
Autor:
Agata Jasik, Iwona Sankowska, E. Papis-Polakowska, P. Kaźmierczak, Jaroslaw Jurenczyk, Krzysztof Czuba, J. Kaniewski
Publikováno v:
ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA. 1:5-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f44bd2fc3ed4251834dabde229f3f396
https://doi.org/10.15199/13.2016.9.1
https://doi.org/10.15199/13.2016.9.1
Autor:
E. Papis-Polakowska
Publikováno v:
ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA. 1:14-21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd1d5e6904b0659dc2ba450fe62ef17c
https://doi.org/10.15199/13.2016.1.2
https://doi.org/10.15199/13.2016.1.2
Publikováno v:
ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA. 1:73-77
This work was partially supported by The National Centre for Research and Development, Poland under project No. PBS1/B3/2/2012.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b4a776eefbc7344aaa0115a4724f42f
https://doi.org/10.15199/ele-2014-198
https://doi.org/10.15199/ele-2014-198
Autor:
Agata Jasik, Z. Orman, Jacek Szade, E. Papis-Polakowska, Andrzej Wawro, Jaroslaw Jurenczyk, J. Kaniewski, W. Rzodkiewicz
Publikováno v:
Thin Solid Films. 567:77-81
The effect of (NH 4 ) 2 S-based chemical treatment on type-II InAs/GaSb superlattice has been investigated. X-ray photoelectron spectroscopy and spectroscopic ellipsometry together with the fractional derivative spectrum model have been used for surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ee4bfd3bfd961c5a0c796f08ef61d73
https://doi.org/10.1016/j.tsf.2014.07.044
https://doi.org/10.1016/j.tsf.2014.07.044
Publikováno v:
Acta Physica Polonica A. 125:1056-1060
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4696ab662b606ed91d5ca925d97ebf2b
https://doi.org/10.12693/aphyspola.125.1056
https://doi.org/10.12693/aphyspola.125.1056
Autor:
T. Płocinski, E. Papis-Polakowska, R.G. White, W. Strupinski, A. Krajewska, C. Deeks, M. Mannsberger, O. Jankowska
Publikováno v:
Acta Physica Polonica A. 125:1061-1064
and Application E. Papis-Polakowskaa,∗, R.G. White, C. Deeks, M. Mannsberger, A. Krajewska, W. Strupinski, T. Paocinski and O. Jankowska Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland Thermo Fisher Scienti c, 81 Wyman
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f1c2d5b3e5a5199e2a9b83e834c981
https://doi.org/10.12693/aphyspola.125.1061
https://doi.org/10.12693/aphyspola.125.1061
Publikováno v:
Acta Physica Polonica A. 125:1052-1055
Characterisation of (100) GaSb Passivated Surface Using Next Generation 3D Digital Microscopy E. Papis-Polakowskaa,∗, E. Leonhardt and J. Kaniewski Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland HIROX EUROPE, Jyfel, 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::929ee7f75bb88d3dce7f7906b1a6e32f
https://doi.org/10.12693/aphyspola.125.1052
https://doi.org/10.12693/aphyspola.125.1052