Zobrazeno 1 - 6
of 6
pro vyhledávání: '"E. P. Kvam"'
Publikováno v:
Philosophical Magazine A. 81:2481-2501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8453df1a27f0119d907cb7956decc675
https://doi.org/10.1080/01418610108217159
https://doi.org/10.1080/01418610108217159
Autor:
M. Chen, Sy_Hwang Liou, Qingsheng Cai, A. L. Vasiliev, M. Chandrasekhar, R. Li, E. P. Kvam, H. Luo, W. B. Yelon
Publikováno v:
Journal of Superconductivity: Incorporating Novel Magnetism. 11:59-62
The HgBa2CuO4+δ sample was characterized by Neutron diffraction and magnetic measurements. Both of the measurements indicate a high purity of the sample. Raman measurement was performed on a HgBa2CuO4+δ compound of Tc = 96 K. The apical oxygen vibr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::819bcff7d24fba45c2ad9ac2ddef50e4
https://doi.org/10.1023/a:1022677711855
https://doi.org/10.1023/a:1022677711855
Publikováno v:
Metallurgical and Materials Transactions A. 28:1157-1167
Fatigue initiation lifetimes were demonstrated to be related to the size and density of microporosity in the midplate region for three differently processed variations of aluminum alloy 7050-T7451. Metallographic and fractographic examination of doub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40c28313473aa781a6186fa73fa9841c
https://doi.org/10.1007/s11661-997-0281-5
https://doi.org/10.1007/s11661-997-0281-5
Publikováno v:
Superconductor Science and Technology. 7:587-591
For this feasibility study, silver/superconductor jelly-roll samples with a superconductor composition of Bi1.8Pb0.4Sr2Ca2Cu3Ox (2223), were fabricated via a thick-film processing technique. It was found that the densification and alignment of 2223 g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d32b8200d632f03a04e22129b8ac30a
https://doi.org/10.1088/0953-2048/7/8/010
https://doi.org/10.1088/0953-2048/7/8/010
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:928
The sidewall defects in selective epitaxial growth (SEG) of silicon were characterized and the nature of these defects was investigated. Electrical characterization of the sidewall defects was performed using diodes fabricated in structures using the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2565c9632444898f1fae74f6b7f5ed3a
https://doi.org/10.1116/1.588208
https://doi.org/10.1116/1.588208
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:923
The sidewall defects in high quality selective epitaxial growth (SEG) of silicon were characterized. Three different SEG diode structures were fabricated and the bulk and perimeter defects were characterized through electrical measurements and transm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b315d079d7c6e6c2d097da2ad16ba44
https://doi.org/10.1116/1.588207
https://doi.org/10.1116/1.588207