Zobrazeno 1 - 10
of 262
pro vyhledávání: '"E. P. Kvam"'
Publikováno v:
Philosophical Magazine A. 81:2481-2501
Autor:
M. Chen, Sy_Hwang Liou, Qingsheng Cai, A. L. Vasiliev, M. Chandrasekhar, R. Li, E. P. Kvam, H. Luo, W. B. Yelon
Publikováno v:
Journal of Superconductivity: Incorporating Novel Magnetism. 11:59-62
The HgBa2CuO4+δ sample was characterized by Neutron diffraction and magnetic measurements. Both of the measurements indicate a high purity of the sample. Raman measurement was performed on a HgBa2CuO4+δ compound of Tc = 96 K. The apical oxygen vibr
Publikováno v:
Metallurgical and Materials Transactions A. 28:1157-1167
Fatigue initiation lifetimes were demonstrated to be related to the size and density of microporosity in the midplate region for three differently processed variations of aluminum alloy 7050-T7451. Metallographic and fractographic examination of doub
Publikováno v:
Superconductor Science and Technology. 7:587-591
For this feasibility study, silver/superconductor jelly-roll samples with a superconductor composition of Bi1.8Pb0.4Sr2Ca2Cu3Ox (2223), were fabricated via a thick-film processing technique. It was found that the densification and alignment of 2223 g
Autor:
Gorman, M.1 monica.gorman@ucd.ie, Kinsella, J.2 jim.kinsella@ucd.ie
Publikováno v:
Advancements in Agricultural Development. 2024, Vol. 5 Issue 2, p46-63. 18p.
Autor:
Aguerre, Verónica1 vaguerre@inia.org.uy, Bianco Bozzo, Mariela2 mbianco@fagro.edu.uy
Publikováno v:
Revista de Economia e Sociologia Rural. 2024, Vol. 62 Issue 4, p1-26. 26p.
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:928
The sidewall defects in selective epitaxial growth (SEG) of silicon were characterized and the nature of these defects was investigated. Electrical characterization of the sidewall defects was performed using diodes fabricated in structures using the
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:923
The sidewall defects in high quality selective epitaxial growth (SEG) of silicon were characterized. Three different SEG diode structures were fabricated and the bulk and perimeter defects were characterized through electrical measurements and transm
Review: Structural, elastic, and thermodynamic properties of cubic and hexagonal Scx Al1−x N crystals.
Publikováno v:
Journal of Applied Physics; 10/28/2023, Vol. 134 Issue 16, p1-56, 56p
Autor:
Mihalic, S., Wade, E., Lüttich, C., Hörich, F., Sun, C., Fu, Z., Christian, B., Dadgar, A., Strittmatter, A., Ambacher, O.
Publikováno v:
Journal of Applied Physics; 10/21/2023, Vol. 134 Issue 15, p1-11, 11p