Zobrazeno 1 - 10
of 18
pro vyhledávání: '"E. P. Hollar"'
Publikováno v:
Philosophical Magazine. 83:2557-2571
Thermal annealing, irradiation with electrons (25-300 keV), and irradiation with photons (hν = 2.33-3.88 eV) have been used to stimulate the crystallization of isolated amorphous zones in Si, Ge, GaAs, GaP and InP. Transmission electron microscopy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f007fa868b4c5d0b7924a11c87ecb4ff
https://doi.org/10.1080/1478643031000119976
https://doi.org/10.1080/1478643031000119976
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 186:126-131
Isolated amorphous zones were created in Ge by implantation with 50 keV Xe ions. Recrystallization of these zones was stimulated by irradiation with electrons having energy from 25 to 300 keV. The process was studied by using transmission electron mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2be6a021a08940919d2ba5cfb095114
https://doi.org/10.1016/s0168-583x(01)00892-8
https://doi.org/10.1016/s0168-583x(01)00892-8
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :197-201
Electron transparent GaAs samples were implanted at 300 K and at 90 K with 50 keV Xe ions, which created small (∼8 nm in diameter) amorphous zones in the crystalline structure. These amorphous zones were observed using a transmission electron micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb9bc0c1a6c8a69d57a342e57b3325a3
https://doi.org/10.1016/s0168-583x(01)00339-1
https://doi.org/10.1016/s0168-583x(01)00339-1
Autor:
Hyun Chul Jin, Daewon Kwon, John R. Abelson, E. P. Hollar, Chih-Chiang Chen, J. David Cohen, Ian M. Robertson
Publikováno v:
Physical Review B. 60:4442-4445
Amorphous silicon films were prepared by dc reactive magnetron sputtering under a range of hydrogen or deuterium partial pressures approaching the phase transition to full microcrystallinity. Tunneling electron microscopy imaging indicated that these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7814164a1c80bcf7ed2fcb34704e953
https://doi.org/10.1103/physrevb.60.4442
https://doi.org/10.1103/physrevb.60.4442
Publikováno v:
AIP Conference Proceedings.
Spatially isolated amorphous zones in Si, Ge, GaAs, GaP and InP were created by low dose (≈ 1011 cm−2) 50 keV Xe ion implantations. The ion‐implanted samples were subsequently irradiated with electrons or photons which induced recrystallization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::263b12808e6d684fdb7a3a429ed86acf
https://doi.org/10.1063/1.1619811
https://doi.org/10.1063/1.1619811
Publikováno v:
MRS Proceedings. 647
Crystallization of spatially isolated amorphous zones in Si, Ge, GaP, InP and GaAs was stimulated thermally and by irradiation with electrons and photons. The amorphous zones were created by a 50 keV Xe+ implantation. Significant thermal crystallizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8314ae22530cc4ed9c71316f4b43313b
https://doi.org/10.1557/proc-647-o14.4/r9.4
https://doi.org/10.1557/proc-647-o14.4/r9.4
Autor:
E. P. Hollar, Daewon Kwon, John R. Abelson, Ian M. Robertson, J. David Cohen, Hyun-Chul Jin, Chih-Chiang Chen
Publikováno v:
MRS Proceedings. 557
Amorphous silicon films were prepared by dc reactive magnetron sputtering under conditions approaching the phase transition to microcrystallinity. Using TEM imaging these films were found to contain clusters of 5 to 50 nm sized Si crystallites embedd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02ec3b516f0be7782540d3c637e48e18
https://doi.org/10.1557/proc-557-495
https://doi.org/10.1557/proc-557-495
Publikováno v:
MRS Proceedings. 540
Si and Ge samples of different substrate orientations were implanted with 50 keV Xe+ ions to a dose around 1011 ions/cm2 where the amorphous zones, created by individual ions, remained spatially isolated. The samples were subsequently irradiated at e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a67184d88eab15d91224ac750f0c6a06
https://doi.org/10.1557/proc-540-67
https://doi.org/10.1557/proc-540-67
Publikováno v:
Journal of Applied Physics; 8/28/2022, Vol. 132 Issue 8, p1-11, 11p
Autor:
Kabiraj, D., Ghosh, Subhasis
Publikováno v:
Journal of Applied Physics; Feb2011, Vol. 109 Issue 3, p033701, 6p, 1 Diagram, 6 Graphs