Zobrazeno 1 - 6
of 6
pro vyhledávání: '"E. P. Drugova"'
Publikováno v:
Высшее образование в России, Vol 32, Iss 6, Pp 93-115 (2023)
The concept of “blended learning” has been widely discussed in Russian higher education. However, there are different interpretations of the concept and its status is not completely clear in the Russian regulatory environment. Although the effect
Externí odkaz:
https://doaj.org/article/6b23ee5f8d6a494bac308e35aff4f6be
Autor:
E. V. Drugova, T. M. Ozerskaya
Publikováno v:
Труды по прикладной ботанике, генетике и селекции, Vol 183, Iss 4, Pp 251-261 (2022)
The history of Leningrad Quarantine Laboratory, a subdivision of the Soviet and Russian phytosanitary services, is discussed. Its interaction and cooperation with the All-Union Research Institute of Plant Industry (later: N.I. Vavilov All-Russian Ins
Externí odkaz:
https://doaj.org/article/d6988b89c71d4df189166e820f3e729f
Publikováno v:
Высшее образование в России, Vol 30, Iss 6, Pp 9-26 (2021)
The article examines the development of personnel policy and human resource management (HRM) in Russian universities under the influence of the Project 5-100. Globalization has intensified the processes of universities corporatization and the spread
Externí odkaz:
https://doaj.org/article/38228b4a28b44b508da4775ea595dc87
Publikováno v:
Semiconductors. 42:238-241
Diffusion of Cr into epitaxial GaAs in an open system in the temperature range of 750–850°C was studied. Temperature dependences of the diffusion coefficient and solubility of Cr in GaAs were determined. Temperature dependences of the diffusion co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33fcec947519055ca05d320f2394699a
https://doi.org/10.1134/s106378260802022x
https://doi.org/10.1134/s106378260802022x
Autor:
E. P. Drugova, M. A. Lelekov, V. A. Chubirko, O. P. Tolbanov, D. Yu. Mokeev, M. D. Vilisova, I. V. Ponomarev, L.P. Porokhovnichenko, G. I. Ayzenshtat
Publikováno v:
Technical Physics. 51:1008-1011
Two types of photovoltaic X-ray detectors based on intrinsic and chromium-compensated epitaxial gallium arsenide are studied. The amplitude spectra taken with different radioactive sources show that the efficiency of charge collection in these detect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cae211f2323e31a9ccbaf79d4468597
https://doi.org/10.1134/s1063784206080093
https://doi.org/10.1134/s1063784206080093
Autor:
E. P. Drugova, L.P. Porokhovnichenko, O.B. Koretskaya, A.I. Potapov, D.L. Budnitsky, V.P. Germogenov, N.N. Bakin, L.S. Okaevich, A. V. Tyazhev, S.S. Khludkov, A.P. Vorobiev, G.I. Ayzenshtat, Kevin M. Smith, O.P. Tolbanov, M. D. Vilisova
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466:25-32
A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3242b68fad96e852ca7a9a0fc8a65973
https://doi.org/10.1016/s0168-9002(01)00820-8
https://doi.org/10.1016/s0168-9002(01)00820-8