Zobrazeno 1 - 1
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pro vyhledávání: '"E. P. Baaklini"'
Publikováno v:
Journal of Electronic Materials. 19:1257-1263
Low temperature, non-alloyed Au-Ge contact formation ton-GaAs is a multi-step pro-cess. During the first 5 min of annealing at 320° C the Au and Ge segregate into regions a few microns in size and extend over the entire thickness of the metal layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e221e4a15f0bfc1c888e46edf8400188
https://doi.org/10.1007/bf02673340
https://doi.org/10.1007/bf02673340
