Zobrazeno 1 - 10
of 18
pro vyhledávání: '"E. Ostan"'
Autor:
E. Ostanina, E. Titova
Publikováno v:
BRICS Law Journal, Vol 10, Iss 1, Pp 109-125 (2023)
This article contends that in the present era of digitalization people’s right to privacy should be protected no less than it was before the widespread use of digital technologies. When taking into account the fact that digitalization has led to a
Externí odkaz:
https://doaj.org/article/40bd3283d6ed4e46a93d2bf5c76905a3
Autor:
A.I. Rukovishnikov, E. Ostan, Alan V. Hayes, Boris L. Druz, S. DiStefano, Viktor Kanarov, N.M. Rossukanyi, A.V. Khomich, V.I. Polyakov
Publikováno v:
Diamond and Related Materials. 7:965-972
Diamond-like carbon (DLC) films with 12–25 GPa hardnesses and 3–400 nm thicknesses were deposited on silicon, Al2O3-TiC substrates, and permalloy coated with Al2O3-TiC substrates using a broad, uniform ion beam from an RF, inductively coupled, CH
Autor:
E. Ostan, A.I. Rukovishnicov, V. D. Frolov, N.M. Rossukanyi, Vitaly I. Konov, Alan V. Hayes, Boris L. Druz, V.I. Polyakov, A.V. Karabutov
Publikováno v:
Diamond and Related Materials. 7:695-698
Diamond-like carbon (DLC) films 4–400 nm thick were deposited on conductive n -Si and metal substrates using direct ion beam deposition from an RF inductively coupled CH 4 -plasma (ICP) source. The field electron emission of the films was examined
Publikováno v:
Surface and Coatings Technology. :708-714
In this paper, we describe a robust process for depositing diamond-like carbon (DLC) films from an r.f. inductively coupled CH4-plasma source (18 cm in diameter). This process represents a significant improvement in ability to carry out reliable faul
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2945-2949
We present some of the ion beam and etch characteristics of a broad‐beam electron cyclotron resonance (ECR) ion source. The source offers two modes of operations suitable for uniform ion beam etching. The low energy mode, 25
Reactive ion beam etching of ferroelectric materials using an RF inductively coupled ion beam source
Publikováno v:
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics.
Reactive Ion Beam Etching (RIBE) has been found to be an extremely useful technique for fabricating highly anisotropic ferroelectric device structures, particularly nonvolatile random access (NVRAM) memory devices, which are difficult to etch by othe
Autor:
E. Ostanina, E. Titova
Publikováno v:
BRICS Law Journal, Vol 7, Iss 2, Pp 118-147 (2020)
Online contracts are characterized by unequal economic opportunities. The consumer, traditionally, has fewer economic opportunities, the seller – more. Digitalization of consumer-seller relations did not solve the old problem of insufficient consum
Externí odkaz:
https://doaj.org/article/5d278a7961404f198791522273edd94f
Autor:
V.I. Polyakov, A. V. Khomich, Alan V. Hayes, E. Ostan, N.M. Rossukanyi, A.I. Rukovishnikov, Boris L. Druz
Publikováno v:
MRS Proceedings. 446
Diamond-like carbon (DLC) films with 4-400 nm thickness were deposited on silicon substrates using direct ion beam from an RF inductively coupled CH4 - plasma (ICP) source. The dependence of the film electrical and photoelectrical properties on metha
Autor:
V.I. Polyakov, E. Ostan, I.G. Teremetskaya, V.P. Varnin, Alan V. Hayes, N.M. Rossukanyi, Boris L. Druz, A.I. Rukovishnikov
Publikováno v:
MRS Proceedings. 442
The parameters of trapping centers in CVD diamond and Diamond-Like Carbon (DLC) films were studied by Charge Deep Level Transient Spectroscopy (Q-DLTS). The concentrations, activation energies, captures cross-section and location of the trapping cent
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