Zobrazeno 1 - 10
of 28
pro vyhledávání: '"E. Neyret"'
Autor:
E. Ferrant, E. Frobert, Florence Ader, Gilles Salles, E. Hodille, V. Safar, E. Neyret, Emmanuel Bachy, P. Sesques
Publikováno v:
Médecine et Maladies Infectieuses. 50:S120-S121
Introduction L’infusion de CAR T cells est un traitement innovant des hemopathies malignes B (lymphomes B diffus a grandes cellules [LBDGC], lymphomes indolents transformes [trL], leucemies aigues lymphoides B [LAL-B]). Une chimiotherapie lymphodep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64be007a1508c53786a380a4d6fb39c7
https://doi.org/10.1016/j.medmal.2020.06.251
https://doi.org/10.1016/j.medmal.2020.06.251
Autor:
Thierry Billon, E. Neyret, Etienne Pernot, Petra Pernot-Rejmánková, Lea Di Cioccio, Roland Madar, Cécile Moulin, Francois Templier
Publikováno v:
Materials Science Forum. :419-422
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045701c5a22812ce841c32111aad1f1f
https://doi.org/10.4028/www.scientific.net/msf.389-393.419
https://doi.org/10.4028/www.scientific.net/msf.389-393.419
Autor:
Jean-Louis Robert, Lea Di Cioccio, Jean Camassel, E. Neyret, Thierry Billon, Julien Pernot, Sylvie Contreras
Publikováno v:
Sensors and Actuators A: Physical. :27-32
In this work, we show that progress made in the crystal growth and device processing technology of 4H-SiC open the way to the development of Hall sensors presenting a low thermal drift with a large sensitivity (930 V/(A T)) in a wide temperature rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::616127b1c855cc65fc361b2dd67a5beb
https://doi.org/10.1016/s0924-4247(01)00812-3
https://doi.org/10.1016/s0924-4247(01)00812-3
Publikováno v:
Journal of Applied Physics. 90:1869-1878
Free electron density and low field electron mobility of 4H–SiC in the temperature range of 35–900 K are examined experimentally and theoretically. Five samples produced by cold-wall atmospheric pressure chemical vapor deposition and doped with n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed5afb79e6aa1523b5bb2e1d634e3ffe
https://doi.org/10.1063/1.1382849
https://doi.org/10.1063/1.1382849
Autor:
Demetrios Anglos, E. Neyret, M. Lagadas, L. Di Cioccio, P. Vicente, Julien Pernot, Jean-Marie Bluet, Thierry Billon
Publikováno v:
Materials Science and Engineering: B. 80:332-336
We report an experimental investigation of the deposition, optical characterization and electrical properties of 6H and 4H-SiC epitaxial layers grown by atmospheric pressure chemical vapor deposition in a home made ‘cold wall’ reactor. From a gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dcdf7134a41ede864c56d8a700cb043
https://doi.org/10.1016/s0921-5107(00)00659-0
https://doi.org/10.1016/s0921-5107(00)00659-0
Publikováno v:
Materials Science Forum. :483-486
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01826f0b2699bf74b1dfad183aad3cd4
https://doi.org/10.4028/www.scientific.net/msf.353-356.483
https://doi.org/10.4028/www.scientific.net/msf.353-356.483
Autor:
E. Neyret, Julien Robert, Sylvie Contreras, Jean Camassel, L. Di Cioccio, W. Zawadzki, Julien Pernot
Publikováno v:
Applied Physics Letters. 77:4359-4361
The free electron density and low-field electron mobility of 4H–SiC is examined in the temperature range 35–900 K. In good samples the electron density is constant in the temperature range 300–900 K, which offers interesting possibilities for h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08a2d4455dd09534b36a83e2a8632b6d
https://doi.org/10.1063/1.1332102
https://doi.org/10.1063/1.1332102
Autor:
E. Neyret, Sylvie Contreras, Jean Camassel, Jean-Louis Robert, Thierry Billon, Lea Di Cioccio, Julien Pernot
Publikováno v:
Transducers ’01 Eurosensors XV ISBN: 9783540421504
In this work we show that progresses made in the crystal growth and device processing technology of 4H-SiC open the way to the development of Hall sensors presenting a low thermal drift with a large sensitivity (930 V/A/T) in a wide temperature range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::246bf285939b81d843a7a26ebf0caa0b
https://doi.org/10.1007/978-3-642-59497-7_233
https://doi.org/10.1007/978-3-642-59497-7_233
Autor:
E. Neyret, C. Pudda, Thierry Billon, C. Raffy, Elisabeth Blanquet, Jean Camassel, Lea Di Cioccio
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc766937666eb5a9e419005a40ac7e21
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033701912&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033701912&partnerID=MN8TOARS
Publikováno v:
HAL
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98)
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.253-257
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98)
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.253-257
We report the results of a series of optical investigations performed on both 6H and 4H epitaxial layers grown at low rate (approximate to 1 mu m h(-1)) in a home-made cold-wall chemical vapor deposition (CVD) reactor. To keep the level of contaminat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e70406cc47d3c22039a8f4a88875001
https://hal.archives-ouvertes.fr/hal-00543776
https://hal.archives-ouvertes.fr/hal-00543776