Zobrazeno 1 - 10
of 312
pro vyhledávání: '"E. NIKONOV"'
Autor:
Hai Li, Dmitri E. Nikonov, Chia-Ching Lin, Kerem Camsari, Yu-Ching Liao, Chia-Sheng Hsu, Azad Naeemi, Ian A. Young
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 1, Pp 10-18 (2022)
Spintronic devices provide a promising beyond-complementary metal-oxide-semiconductor (CMOS) device option, thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multiphysics dynamics, a rigorous treatment of both
Externí odkaz:
https://doaj.org/article/a2028be671144baab2624ec15f769887
Autor:
P. B. Meisenheimer, R. A. Steinhardt, S. H. Sung, L. D. Williams, S. Zhuang, M. E. Nowakowski, S. Novakov, M. M. Torunbalci, B. Prasad, C. J. Zollner, Z. Wang, N. M. Dawley, J. Schubert, A. H. Hunter, S. Manipatruni, D. E. Nikonov, I. A. Young, L. Q. Chen, J. Bokor, S. A. Bhave, R. Ramesh, J.-M. Hu, E. Kioupakis, R. Hovden, D. G. Schlom, J. T. Heron
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
In this work, Meisenheimer et al. use careful epitaxial growth of FeGa thin films to achieve a metastable state with remarkably high magetostrictive coefficients. Materials with strong magnetostrictive properties are vital components in magnetoelectr
Externí odkaz:
https://doaj.org/article/8c6cd1eb3d274d8f928c53c003d336f8
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 1, Pp 18-25 (2021)
Beyond complementary metal–oxide–semiconductor (CMOS) devices have functionalities different from CMOS transistors, and therefore, the development of novel circuits that leverage their properties is necessary for their practical application to co
Externí odkaz:
https://doaj.org/article/2ef933791ef9432c9bab573ed0436fa7
Autor:
Dmitri E. Nikonov, Peter Kurahashi, James S. Ayers, Hai Li, Telesphor Kamgaing, Georgios C. Dogiamis, Hyung-Jin Lee, Yongping Fan, I. A. Young
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 2, Pp 170-176 (2020)
Oscillator neural networks (ONNs) are a promising hardware option for artificial intelligence. With an abundance of theoretical treatments of ONNs, few experimental implementations exist to date. In contrast to prior publications of only building blo
Externí odkaz:
https://doaj.org/article/af76ab3acab04035bcf4f38dd80f8f68
Autor:
Huichu Liu, Sasikanth Manipatruni, Daniel H. Morris, Kaushik Vaidyanathan, Dmitri E. Nikonov, Tanay Karnik, Ian A. Young
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 1, Pp 1-9 (2019)
The supply voltage scaling has become increasingly challenging in the advanced CMOS technology due to the threshold voltage requirement for transistor OFF leakage, limiting the system energy efficiency. Spintronic logic utilizes the physical quantity
Externí odkaz:
https://doaj.org/article/69fc544b79d748f1b0b900a927396e46
Autor:
Dmitri E. Nikonov, Ian A. Young
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 2, Pp 75-84 (2019)
Neural network circuits and architectures are currently under active research for applications to artificial intelligence and machine learning. Their physical performance metrics (area, time, and energy) are estimated. Various types of neural network
Externí odkaz:
https://doaj.org/article/b1014230227544fb9c2c1f55d4ab8cd4
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 1, Pp 10-18 (2019)
The energy and delay reductions from CMOS scaling have stagnated, motivating the search for a CMOS replacement. Spintronic devices are one of the promising beyond-CMOS alternatives. However, they exhibit high switching error rates of 1% or more when
Externí odkaz:
https://doaj.org/article/c080bf36177b4f93bd66c9e90fc72628
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 1, Pp 34-42 (2019)
Computational scaling beyond silicon electronics based on Moore's law requires the adoption of alternate state variables such as electronic spin. Multiple research efforts are underway exploring both Boolean and non-Boolean design space using spin de
Externí odkaz:
https://doaj.org/article/9cea1abd162741b38021e92ba4cbb97b
Autor:
Anni Lu, Jae Hur, Yuan-Chun Luo, Hai Li, Dmitri E. Nikonov, Ian A. Young, Yang-Kyu Choi, Shimeng Yu
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 13:422-435
Autor:
P. Quarterman, Congli Sun, Javier Garcia-Barriocanal, Mahendra DC, Yang Lv, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young, Paul M. Voyles, Jian-Ping Wang
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-6 (2018)
Until now, there have been three choices for a room temperature (RT) single element ferromagnetic material in fundamental studies and applications. Here the authors achieved body-centered tetragonal phase ruthenium thin films by epitaxial growth, whi
Externí odkaz:
https://doaj.org/article/99ba48dd9219451a901e8450d4289cbc