Zobrazeno 1 - 3
of 3
pro vyhledávání: '"E. N. Sevost'yanov"'
Autor:
S. I. Goloudina, Alexander N. Smirnov, G. A. Konoplev, V. M. Pasyuta, V. V. Kudryavtsev, V. V. Andryushkin, Iosif V. Gofman, Demid A. Kirilenko, V. P. Sklizkova, V. M. Svetlichnyi, E. N. Sevost’yanov, V. V. Luchinin
Publikováno v:
Technical Physics Letters. 45:471-474
Multigraphene films have been for the first time obtained on the surface of quartz glass via carbonization of polyimide Langmuir–Blodgett films. The Raman spectra of the films show bands G and D and a broad band at 2300–3200 cm–1, which are cha
Autor:
N. M. Latnikova, S. A. Karandashev, A.A. Lavrov, N.M. Stus, Pavel N. Brunkov, M.A. Remennyi, E. N. Sevost’yanov, A. S. Petrov, B. A. Matveev, N. D. Il’inskaya
Publikováno v:
Semiconductors. 48:1359-1362
InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 μm spectral region in a wide temperature range 77–300 K. Estimations of detectivity as well as p-n junction p
Autor:
N. D. Il’inskaya, A. S. Petrov, N. M. Latnikova, N. M. Stus, M. A. Remennyi, E. N. Sevost’yanov, B. A. Matveev, A. A. Lavrov, S. A. Karandashev
Publikováno v:
Technical Physics Letters. 39:818-821
Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/n-InAs heterostructure formed on a heavily doped n +-InAs substrate (n + ∼ 1018 cm−3) is presented. It is shown that, at low temperatures (77 < T