Zobrazeno 1 - 10
of 39
pro vyhledávání: '"E. Misra"'
Background and Purpose: Stroke is reported as a consequence of severe acute respiratory syndrome coronavirus-2 (SARS-CoV-2) infection in several reports. However, data are sparse regarding the details of these patients in a multinational and large sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::82a9e5b3ff6194dab5d75201f14c2422
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:2987368
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:2987368
Autor:
Tunga Krishna R, R. Mendelson, I. Melville, J. Coffin, E. Misra, C. Carey, Thomas A. Wassick, David Questad, Christopher D. Muzzy
Publikováno v:
International Symposium on Microelectronics. 2015:000787-000792
The introduction of low-k & ultra-low-k dielectrics, lead-free (Pb-free) solder interconnects or C4's, and organic flip-chip laminates for integrated circuits have led to some major reliability challenges for the semiconductor industry. These include
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::219daa9071222466a6337f33b1482d77
https://doi.org/10.4071/isom-2015-thp21
https://doi.org/10.4071/isom-2015-thp21
Autor:
Mark C. H. Lamorey, Timothy H. Daubenspeck, R. Bisson, Thomas A. Wassick, K. Smith, Hosadurga Shobha, Dimitri R. Kioussis, Griselda Bonilla, J. Wright, S. Tetreault, David B. Stone, I. Paquin, Timothy M. Shaw, E. Misra, Gordon C. Osborne, Brian R. Sundlof, X.-H. Liu, Christopher D. Muzzy, S. S. Bouchard, David L. Questad
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
This study examines different approaches to determining the chip failure rate that occurs due to dielectric cracking under C4 sites during chip joining. We show that testing of the strength of individual C4s by a single bump shear technique gives a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c59fd5d443a680f84c688a94884e6d01
https://doi.org/10.1109/irps.2016.7574564
https://doi.org/10.1109/irps.2016.7574564
Autor:
Timothy H. Daubenspeck, Timothy M. Shaw, X.-H. Liu, Christopher D. Muzzy, Griselda Bonilla, S. S. Bouchard, Thomas A. Wassick, David B. Stone, David L. Questad, Brian R. Sundlof, Hosadurga Shobha, Dimitri R. Kioussis, I. Paquin, E. Misra, Gordon C. Osborne, J. Wright, S. Tetreault, R. Bisson, Mark C. H. Lamorey
Publikováno v:
2015 IEEE International Integrated Reliability Workshop (IIRW).
The paper examines the factors that affect the formation of delaminations under C4 joints during chip joining. Through multiscale finite element modeling and chip joining experiments we find that two important parameters determining the susceptibilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5846e5f0ad5af07268a9f4638d1bec1e
https://doi.org/10.1109/iirw.2015.7437081
https://doi.org/10.1109/iirw.2015.7437081
Failure mechanisms of pure silver, pure aluminum and silver–aluminum alloy under high current stress
Publikováno v:
Microelectronics Reliability. 46:2096-2103
This study investigates the suitability of pure silver (Ag), pure aluminum (Al) and silver (3 at.%-aluminum) alloy (Ag(Al)) metallizations for potential application in programmable fuse links in field-programmable gate arrays. Single-line test-struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f901b599c2c8cc6ffe0912ba613d2254
https://doi.org/10.1016/j.microrel.2006.01.011
https://doi.org/10.1016/j.microrel.2006.01.011
Autor:
N. D. Theodore, E. Misra, Pramod K Shetty, Jose Menendez, Jie Ren, Terry Alford, H. C. Kim, James W. Mayer
Publikováno v:
Materials Letters. 59:872-875
Polysilicon thin film transistors on flexible substrates are of considerable interest for applications in flexible displays. This paper investigates the formation of nanocrystalline silicon on flexible, transparent polymer substrates. An 800-nm layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a345f440b62c14f9c7f8a756b11eb9
https://doi.org/10.1016/j.matlet.2004.11.034
https://doi.org/10.1016/j.matlet.2004.11.034
Publikováno v:
Thin Solid Films. 474:235-244
The effects of high-current stress (3–10 A) on single-line structures of aluminum (Al) and silver (Ag) of different widths (2.5–10 μm) and on titanium nitride (TiN) as barrier are reported in this paper. As the applied current-densities were inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2297683e0910a466798c5ceeeb3dcce6
https://doi.org/10.1016/j.tsf.2004.02.103
https://doi.org/10.1016/j.tsf.2004.02.103
Publikováno v:
Microelectronics Reliability. 45:391-395
The present study deals with the use of a rapid and non-destructive technique based on percolation theory to predict failure times during the reliability analysis of thin film interconnects under high current stress. Al–Cu test structures were used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e432c3674e9c13af1acea754b8949c06
https://doi.org/10.1016/j.microrel.2004.09.009
https://doi.org/10.1016/j.microrel.2004.09.009
Publikováno v:
Thin Solid Films. 457:338-345
The thermal stability and the diffusion barrier properties of DC reactively sputtered tantalum oxynitride (Ta-O-N) thin films, between silver (Ag) and silicon (Si) p + n diodes were investigated. Both materials characterization (X-ray diffraction ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57bffa2a401ff7a7fdfd64a2483c2d2a
https://doi.org/10.1016/j.tsf.2003.10.162
https://doi.org/10.1016/j.tsf.2003.10.162
Publikováno v:
International Journal of Pharmaceutics. 259:143-160
Highly branched, functionalized polymers have potential to act as efficient drug carrier systems. Dendrimers are ideal candidates among model hyperbranched polymers because of their well-defined structure and high density of functional groups. Using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5780ce8d04e8d92c35a4840916240137
https://doi.org/10.1016/s0378-5173(03)00225-4
https://doi.org/10.1016/s0378-5173(03)00225-4