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Photo induced changes in the optical properties of thermally evaporated As 40 Se 50 Sb 10 films

Autor: E. M. Vinod, K. S. Sangunni, R. Ganesan, Ramakanta Naik, Arpitha Jain

Publikováno v: physica status solidi c. 8:2785-2788

The thermally evaporated amorphous As40Se50Sb10 thin film of 800 nm thickness was subjected to light exposure for photo induced studies. The changes were accompanied by structural effects, which in turn, lead to changes in the optical properties. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::03db7d8d0dab28283672778408c3b75d
https://doi.org/10.1002/pssc.201084130

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Photo induced effects on the optical properties of As20Sb20S60 thin films

Autor: Ramakanta Naik, Rajamohan Ganesan, Sanjit K. Parida, K. S. Sangunni, E. M. Vinod

Publikováno v: IndraStra Global.

The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light exposure for photo induced studies. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d0edb8a52c9eaa660749f2ab1022c0d
https://igi.indrastra.com/items/show/210965

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Observation of photobleaching and intensity dependent kinetics in Ge22As22Se56 thin films under sub-bandgap light illumination

Autor: E. M. Vinod, K. S. Sangunni, Pritam Khan, K. V. Adarsh, A. R. Barik

Publikováno v: IndraStra Global.

We experimentally demonstrate photobleaching (PB) in Ge22As22Se56 thin films, when illuminated with a diode pumped solid state laser (DPSSL) of wavelength 671 nm, which is far below the optical bandgap of the sample. Interestingly, we found that PB i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03baeb793a6a6a7d15a49c8729b2e79a
https://igi.indrastra.com/items/show/210964

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Structural transition and enhanced phase transition properties of Se doped Ge₂Sb₂Te₅ alloys

Autor: E M, Vinod, K, Ramesh, K S, Sangunni

Publikováno v: Scientific Reports

Amorphous Ge2Sb2Te5 (GST) alloy, upon heating crystallize to a metastable NaCl structure around 150°C and then to a stable hexagonal structure at high temperatures (≥250°C). It has been generally understood that the phase change takes place betwe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::277794ed64dc15a5b92c00b4111039dc
https://pubmed.ncbi.nlm.nih.gov/25634224

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The effect of Se doping on spectroscopic and electrical properties of GeTe

Autor: K. S. Sangunni, E. M. Vinod

Publikováno v: IndraStra Global.

Selenium doped thin films of GeTe alloys were investigated for their structural modifications by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron Spectroscopy (XPS) and Raman Spectroscopy. The band gap increase from 0.6

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8e65ecf54b65067b8a8e5b805b49d1f
https://igi.indrastra.com/items/show/210462

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Direct hexagonal transition of amorphous (Ge2Sb2Te5)(0.9)Se-0.1 thin films

Autor: K. S. Sangunni, E. M. Vinod, Rajamohan Ganesan, K. P. Ramesh

Publikováno v: IndraStra Global.

Ge2Sb2Te5 (GST) is well known for its phase change properties and applications in memory and data storage. Efforts are being made to improve its thermal stability and transition between amorphous and crystalline phases. Various elements are doped to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf0a9cc1c2f0d777daef3625e1513374
http://eprints.iisc.ac.in/48866/1/app_phy_let_104-6_vinod_2014.pdf

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Temperature dependent optical constants of amorphous Ge2Sb2Te5 thin films

Autor: A.P.A. Faiyas, K. S. Sangunni, Rajamohan Ganesan, Ramakanta Naik, E. M. Vinod

Publikováno v: Journal of Non-Crystalline Solids. 356:2172-2174

This study focuses on the temperature dependent optical band gap changes in the amorphous Ge2Sb2Te5 (GST) films. The behavior of the amorphous GST thin films at low temperatures has been studied. The band gap increment of around 0.2 eV is observed at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0026334e7ed07a3169a6ac49c71851e
https://doi.org/10.1016/j.jnoncrysol.2010.07.039

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Photo induced effects in Bi∕As[sub 2]Se[sub 3] bilayer thin films

Autor: Rajamohan Ganesan, K. S. Sangunni, E. M. Vinod, C. Kumar, Ramakanta Naik

Publikováno v: AIP Conference Proceedings.

Bilayer thin films of Bi/As2Se3 were prepared from Bi and As2Se3 by thermal evaporation technique under high vacuum. We have irradiated the films by using a laser of 532 nm wavelength to study photo diffusion of Bi into As2Se3. The diffusion of Bi in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64e84b8044bacbd546ba38fee4f26eb0
https://doi.org/10.1063/1.4791147

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Optical properties change of Ge[sub 12.5]Sb[sub 25]Se[sub 62.5] thin films by laser irradiation

Autor: C. Kumar, Ramakanta Naik, E. M. Vinod, R. Ganesan

Publikováno v: AIP Conference Proceedings.

The thermally evaporated Ge12.5Sb25Se62.5 thin films of 800 nm thickness were subjected to light exposure for photo induced studies. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::17a2992157504da4b2f5f242d5652481
https://doi.org/10.1063/1.4791191

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