AlGaInP multiple‐quantum‐wire lasers grown by gas source molecular beam epitaxy

Autor: P. J. Pearah, K. C. Hsieh, A. M. Moy, A. C. Chen, K. Y. Cheng, E. M. Stellini

Publikováno v: Applied Physics Letters. 62:458-460

GaxIn1−xP/Al0.15Ga0.35In0.5P graded‐index separate‐confinement heterostructure visible laser structures with multiple quantum wire active regions have been formed in situ during gas source molecular beam epitaxy. No regrowths or ex situ fabrica

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d730e3142e643ea7c82de3f537b4f80f
https://doi.org/10.1063/1.108932

Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy.

Autor: Park, K. W., Park, C. Y., Ravindran, Sooraj, Kang, S. J., Hwang, H. Y., Jho, Y. D., Jo, Y. R., Kim, B. J., Lee, Y. T.

Publikováno v: Journal of Applied Physics; 2014, Vol. 116 Issue 4, p043516-1-043516-8, 8p, 1 Diagram, 5 Graphs

AlGaInP multiple-quantum-wire lasers grown by gas source molecular beam epitaxy.

Autor: Stellini, E.M., Cheng, K.Y., Pearah, P.J., Chen, A.C., Moy, A.M., Hsieh, K.C.

Publikováno v: Applied Physics Letters; 2/1/1993, Vol. 62 Issue 5, p458, 3p, 1 Black and White Photograph, 1 Diagram, 4 Graphs

Visible wavelength (6470 Å) GaxIn1-xP/GaAs0.66P0.34 quantum wire heterostructures.

Autor: Moy, A. M., Chen, A. C., Cheng, K. Y., Chou, L. J., Hsieh, K. C., Tu, C.-W.

Publikováno v: Journal of Applied Physics; 12/15/1996, Vol. 80 Issue 12, p7124, 6p, 1 Diagram, 5 Graphs

Strained AlGaInP Multiple Quantum Wire Lasers Grown By Gas Source Molecular Beam Epitaxy.

Autor: Pearah, P.J., Chen, A.C., Moy, A.M., Stellini, E.M., Hsieh, K.C., Cheng, K.Y.

Publikováno v: LEOS 1993 Summer Topical Meeting Digest on Optical Microwave Interactions/Visible Semiconductor Lasers/Impact of Fiber Nonlinearities on Lightwave Systems/Hybrid Optoelectronic Integration & Packagi; 1993, pV29-V30, 2p