Zobrazeno 1 - 10
of 31
pro vyhledávání: '"E. M. Sankara Narayanan"'
Publikováno v:
IET Power Electronics, Vol 14, Iss 14, Pp 2305-2313 (2021)
Abstract Here, an ultra‐fast protection scheme that is dedicated to depletion‐mode (d‐mode) devices is proposed. The key to the d‐mode device gate drive design is the negative supply and overcurrent protection, due to the safety concern for d
Externí odkaz:
https://doaj.org/article/165d1320870245bf82a28da309861177
Publikováno v:
IET Power Electronics, Vol 14, Iss 14, Pp 2305-2313 (2021)
Here, an ultra‐fast protection scheme that is dedicated to depletion‐mode (d‐mode) devices is proposed. The key to the d‐mode device gate drive design is the negative supply and overcurrent protection, due to the safety concern for d‐mode d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bddceae24caa21778aeab3c784ba8c83
https://doi.org/10.1049/pel2.12179
https://doi.org/10.1049/pel2.12179
Autor:
Alireza Sheikhan, Gopika Narayanankutty, E. M. Sankara Narayanan, Hiroji Kawai, Shuichi Yagi, Hironobu Narui
Publikováno v:
Japanese Journal of Applied Physics. 62:014501
The surge current capability of power diodes is one of the essential parameters that needs to be considered for high power density operations in power electronic applications. Gallium Nitride (GaN) is emerging as the next generation of power semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::728b472942cd36523ffd649c47c43c8c
https://doi.org/10.35848/1347-4065/aca853
https://doi.org/10.35848/1347-4065/aca853
Publikováno v:
Solid-State Electronics. 125:111-117
This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dad0ece3373b32175017fc2321d6c10b
https://doi.org/10.1016/j.sse.2016.07.022
https://doi.org/10.1016/j.sse.2016.07.022
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 29:1-10
One of the critical requirements for high power devices is to have rugged and reliable capability against hash operating conditions. In this paper, we present the dynamic voltage clamping capability of 3.3kV Field Stop Clustered IGBT devices under ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::910b339f9c3cefd28494c763f2106476
https://doi.org/10.2298/fuee1601001l
https://doi.org/10.2298/fuee1601001l
Publikováno v:
2016 IEEE Energy Conversion Congress and Exposition (ECCE).
This paper presents the finding of thermal characterization of polycrystalline diamond for power semiconductor device modules in a converter. Comparisons of measured thermal performance of two diamond demonstrators, consisting of metalized diamond ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e65cb799707a69f6fccc521d3431af59
https://doi.org/10.1109/ecce.2016.7855181
https://doi.org/10.1109/ecce.2016.7855181
Publikováno v:
8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016).
In this paper, the influence of cassette design upon the breakdown performance of a 4.5kV press-pack IGBT module is investigated. Detailed numerical simulations show the influence of air gap and die position upon the breakdown performance of the asse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f04d647fa1aa68b896db04710e4dcff
https://doi.org/10.1049/cp.2016.0226
https://doi.org/10.1049/cp.2016.0226
Publikováno v:
ESSDERC
This paper reports the fabrication method and electrical characterization results of the first-ever demonstrated high voltage AlGaN/GaN HEMTs on CVD diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bfc1f1403fd610b4d39e1194c8ce0ca
https://doi.org/10.1109/essderc.2015.7324729
https://doi.org/10.1109/essderc.2015.7324729
Publikováno v:
IEEE Electron Device Letters. 32:1272-1274
The performance of a 10-kV p-channel trench clustered insulated-gate bipolar transistor (IGBT) in silicon carbide evaluated through extensive 2-D numerical simulations is reported here for the first time. Comparison with an equivalent trench IGBT rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb95abf6b32c991f4e704b197d15c83
https://doi.org/10.1109/led.2011.2160144
https://doi.org/10.1109/led.2011.2160144
Publikováno v:
IEEE Electron Device Letters. 32:542-544
GaN super heterojunction field effect transistors (super HFET) based on the polarization junction concept are demonstrated for the first time. The super HFET has charges of 2-D electron gas and hole gas, respectively induced by positive and negative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a3f00114172c7eb2a7c5c59c47837f6
https://doi.org/10.1109/led.2011.2105242
https://doi.org/10.1109/led.2011.2105242