Výsledky vyhledávání - "E. M. Pavelescu"

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X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium

Autor: Thomas Walther, Johann Peter Reithmaier, J Nutter, E M Pavelescu

We investigate AlGaAs/GaAs superlattices as well as InGaAs/GaAs quantum wells (QWs) and epitaxial quantum dots (QDs) where during the molecular beam epitaxy of InGaAs QDs the aluminium flux cell was opened briefly to incorporate fractional monolayers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c62e16087d667a525cbb86621b35ec37
https://eprints.whiterose.ac.uk/160074/1/Walther+et+al_2020_Semicond._Sci._Technol._10.1088_1361-6641_ab8c52.pdf

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Akademický článek

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Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Autor: E. Arola, S.I. Spânulescu, N. Bălţăţeanu, E.-M. Pavelescu

Publikováno v: Optical Materials. 64:361-365

The effects of 7 MeV electron irradiation at very high doses of 2 × 10 17 and 1.5 × 10 18 electrons / cm 2 and subsequent rapid thermal annealing on photoluminescence from a strain-compensated GaInAsN/GaAsN/GaAs quantum well structure are investiga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99234437a8357b7e874f55affd5dee39
https://doi.org/10.1016/j.optmat.2016.12.007

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Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

Autor: C. Ticoş, Rachel Goldman, E.-M. Pavelescu, Raluca Gavrila, Akihiro Wakahara, A. Matei, Keisuke Yamane, O. Ligor, J. Occena

Publikováno v: Applied Physics Letters. 117:142106

We have examined the influence of electron irradiation and rapid thermal annealing on photoluminescence emission from GaAsNBi alloys. Electron irradiation of a 1-eV compressively strained GaNAsBi-on-GaAs epilayer, grown by molecular beam epitaxy and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::256594a9acba3f4c5a03e4c5a611ca2d
https://doi.org/10.1063/5.0027400

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Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs

Autor: Antti Tukiainen, Ville Polojärvi, Mircea Guina, Janne Puustinen, Andreas Schramm, E.-M. Pavelescu, Arto Aho

Publikováno v: Scripta Materialia. 108:122-125

The optical properties of p-i-n solar cells comprised of InAs quantum dots embedded within GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating GaNAs and GaInNAs layers shift the photoluminescence emission as well as absorp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8cd0e767565e901d8797fcee1e1f240
https://doi.org/10.1016/j.scriptamat.2015.06.033

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Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

Autor: Yongqiang Wang, Robert Kudrawiec, T. Jen, E.-M. Pavelescu, W. M. Linhart, Jared. W. Mitchell, Rachel Goldman, J. Occena

Publikováno v: Applied Physics Letters. 115:082106

We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9929b2c6453efbcde057dfa51432e88
https://doi.org/10.1063/1.5057424

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Type-II band alignment of low-boron-content BGaN/GaN heterostructures

Autor: A. Kadys, Jūras Mickevičius, R. Tomašiūnas, O. Ligor, E. M. Pavelescu, Mindaugas Andrulevičius, Gintautas Tamulaitis

Publikováno v: Journal of Physics D: Applied Physics. 52:325105

The band offset parameters of low-boron-content BGaN/GaN heterojunctions have been studied using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) in BxGa1−xN epilayers (x ≤ 0.043) grown on GaN/sapphire and AlN/sapphire templates.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3458f4fa0e5573c5942bf0498110a586
https://doi.org/10.1088/1361-6463/ab2337

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On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers

Autor: Mihail Dumitrescu, Robert Kudrawiec, E.-M. Pavelescu

Publikováno v: Journal of Luminescence. 141:67-70

The effects of growth temperature (410 and 470 °C) and subsequent rapid thermal annealing (RTA) on luminescence performance of lattice-matched 1-eV GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, has been studied ex

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::739f6edd969acc9db1a7317483138a3c
https://doi.org/10.1016/j.jlumin.2013.02.041

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Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers

Autor: Robert Kudrawiec, Janne Puustinen, Antti Tukiainen, Mircea Guina, E.-M. Pavelescu

Publikováno v: Journal of Luminescence. 136:347-350

We have investigated the influence of 7-MeV electron irradiation (1.2×1015 and 1.8×1016 electrons/cm−2 doses) and subsequent rapid thermal annealing (RTA) on luminescence efficiency of nearly lattice-matched 1-eV GaInNAs-on-GaAs thin epilayers, g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c177fdaea2875ad04b198b6a3a96c80
https://doi.org/10.1016/j.jlumin.2012.12.008

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