Zobrazeno 1 - 10
of 22
pro vyhledávání: '"E. M. Griswold"'
Publikováno v:
Thin Solid Films. 472:76-83
A full-wafer backside n-ohmic metallization scheme for InP is reported. The contact is formed by a single-step, all-sputter process and has been used successfully in three-inch InP opto-electronic device manufacturing. The metallization is based on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d969ecc01c7331822db17af05cff37
https://doi.org/10.1016/j.tsf.2004.06.112
https://doi.org/10.1016/j.tsf.2004.06.112
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1011-1014
Both GaAs and InP heterojunction bipolar transistors (HBT’s) were analyzed by x-ray diffraction measurements with (002) reflection. For GaAs HBT’s, the InGaP emitter thickness and alloy composition were accurately determined. For InP HBT’s, bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8b0ee16439c2e07a0dcfc98b9f35746
https://doi.org/10.1116/1.1467356
https://doi.org/10.1116/1.1467356
Autor:
S. Fafard, L. D. Madsen, E. M. Griswold, Michael Robertson, John P. McCaffrey, Z. R. Wasilewski
Publikováno v:
Journal of Applied Physics. 88:2272-2277
Single and multiple layers of self-assembled InAs quantum dots (QDs) produced by the indium-flush technique have been studied by transmission electron microscopy (TEM) in an effort to develop techn ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6fde26d73b9694fe4d15cc4f2d0dac9
https://doi.org/10.1063/1.1287226
https://doi.org/10.1063/1.1287226
Autor:
S. Fafard, Yan Feng, E. M. Griswold, Karin Hinzer, J. Lapointe, A. Delâge, Anthony J. SpringThorpe
Publikováno v:
Journal of Applied Physics. 87:1496-1502
Self-assembled quantum dots (QDs) of highly strained InAlAs have been grown by molecular beam epitaxy in separate-confinement p–i–n heterostructures on (001) GaAs substrates. Results from a systematic study of samples with varying amounts of depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2ed1d2d67615dd203baba258bf64101
https://doi.org/10.1063/1.372040
https://doi.org/10.1063/1.372040
Autor:
Karin Hinzer, Simon Fafard, E. M. Griswold, Y. Feng, A.J. SpringThorpe, J. Arlett, Sylvain Charbonneau
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 2:729-733
Separate confinement p–i–n heterostructures with highly strained InAlAs self-assembled quantum dots (QDs) in the active region have been grown by molecular beam epitaxy (MBE) on (0 0 1) GaAs. At low temperatures (4–50 K) stimulated emission occ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d0dcbf2fc9e38cc85e1cafc0d01b734
https://doi.org/10.1016/s1386-9477(98)00149-0
https://doi.org/10.1016/s1386-9477(98)00149-0
Autor:
John P. McCaffrey, Yan Feng, A.J. SpringThorpe, Sylvain Charbonneau, Simon Fafard, Karin Hinzer, E. M. Griswold
Publikováno v:
Materials Science and Engineering: B. 51:114-117
Self-assembled quantum dots (QDs) of highly strained InAlAs have been grown by molecular beam epitaxy (MBE) in separate confinement p-i-n heterostructres on (001) GaAs substrates. At low temperatures, the lasing threshold currents for red-emitting QD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c0b999622c4deb86a062e31f4bf1b02
https://doi.org/10.1016/s0921-5107(97)00241-9
https://doi.org/10.1016/s0921-5107(97)00241-9
Publikováno v:
Journal of Materials Research. 12:2612-2616
The microstructure of Pb(Zr, Ti)O3 (PZT) and PbTiO3 (PT) thin films deposited by the sol-gel method and chemical vapor deposition, respectively, were examined by transmission electron microscopy (TEM). Domains with ∼7 and ∼20 nm widths were found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3e5c4aa5880b4bc79b7715722e06281
https://doi.org/10.1557/jmr.1997.0347
https://doi.org/10.1557/jmr.1997.0347
Publikováno v:
Microelectronic Engineering. 29:239-242
Amorphous ruthenium oxide (RuO2) and Ru metal films are fabricated using reactive sputter deposition. The electrodes are then rapid thermally annealed in oxygen to form crystalline RuO2. Control of preferred orientation in the RuO2 using deposition p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33d0ab15cc9c082508c3d6e6c6b7a88a
https://doi.org/10.1016/0167-9317(95)00153-0
https://doi.org/10.1016/0167-9317(95)00153-0
Publikováno v:
Journal of Materials Research. 10:3149-3159
The crystallization kinetics of the pyrochlore to perovskite phase transformation in lead zirconate titanate (PZT) thin films have been analyzed using rapid thermal processing (RTP). Sol-gel PZT thin films, fabricated on platinum electrodes, were ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e3fd7e7c2359a4dbbd1fdab3165ff9b
https://doi.org/10.1557/jmr.1995.3149
https://doi.org/10.1557/jmr.1995.3149
Publikováno v:
Integrated Ferroelectrics. 10:301-308
The ferroelectric and dielectric properties of sol gel thin film PZT are affected by the physical structure of the substrate electrodes. Ruthenium oxide electrodes were fabricated using sputter dep...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::835642126508d4679c5ff26d52b8f212
https://doi.org/10.1080/10584589508012287
https://doi.org/10.1080/10584589508012287