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pro vyhledávání: '"E. M. Alexeev"'
Autor:
F. A. Benimetskiy, V. A. Sharov, P. A. Alekseev, V. Kravtsov, K. B. Agapev, I. S. Sinev, I. S. Mukhin, A. Catanzaro, R. G. Polozkov, E. M. Alexeev, A. I. Tartakovskii, A. K. Samusev, M. S. Skolnick, D. N. Krizhanovskii, I. A. Shelykh, I. V. Iorsh
Publikováno v:
APL Materials, Vol 7, Iss 10, Pp 101126-101126-5 (2019)
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMDs)—direct bandgap semiconductors with strong excitonic response. Deformation of TMD monolayers allows ind
Externí odkaz:
https://doaj.org/article/5e5cb24eadde452fa77e958c8f022b12
Publikováno v:
Physical Review B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::9b85f01dfa15fc470009d6f1570574c3