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pro vyhledávání: '"E. Lotter"'
Publikováno v:
Springer Series in Optical Sciences ISBN: 9783030228637
After a short overview of the historical development of the Cu(In, Ga)Se2 (CIGS) thin film solar cell and its special features, we give an overview of the deposition and optimization of the p-type CIGS absorber as well as the subsequent n-type buffer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6e3e563e58ac2046615066864785c5d
https://doi.org/10.1007/978-3-030-22864-4_9
https://doi.org/10.1007/978-3-030-22864-4_9
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Publikováno v:
Solar Energy Materials and Solar Cells. :519-527
Different concepts for optimizing the transparent conductive oxide (TCO)/p-interface in hydrogenated amorphous silicon (a-Si:H) based solar cells have been studied in order to avoid the segregation of metal layers, and hence considerable reductions i
Publikováno v:
Journal of Non-Crystalline Solids. :1031-1034
Amorphous hydrogenated silicon carbon (a-SiC:H) has been deposited in a very high frequency (VHF) glow discharge (GD) and compared to an optimized material from a DC-GD. It turns out that good quality material is obtained at high deposition rates (r
Autor:
Robert E. Lotter, Michael H. Santare
Publikováno v:
Composites Science and Technology. 40:87-107
A new technique for prediction of linear elastic fracture parameters is discussed and the results are presented for several specimens, including the Mode I double cantilevered beam (DCB) specimen and the Mode II end notched flexure (ENF) specimen. Th
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
Different concepts for optimizing the transparent conductive oxide (TCO)/p-interface in a-Si:H based solar cells have been studied in order to avoid metal layer segregation, and hence considerable reductions in short circuit current. Therefore, the a
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Publikováno v:
Applied Physics Letters. 60:3262-3264
We report a basic disproportionality between light‐induced changes in the defect density of undoped hydrogenated amorphous silicon (a‐Si:H) determined from optical absorption and determined from spin density measurements. The results yield a lowe
Publikováno v:
MRS Proceedings. 336
The chemical reactions at the surface of transparent conductive oxides (SnO2, ITO and ZnO) have been studied in silane and hydrogen plasmas by in-situ ellipsometry and by SIMS as well as XPS depth profiling. SIMS and XPS of the interface reveal an in