Zobrazeno 1 - 10
of 149
pro vyhledávání: '"E. Ligeon"'
Publikováno v:
Journal of Applied Physics. 78:3706-3713
II–VI semiconductor multilayers, containing a quantum well (ZnTe/CdTe/ZnTe or Cd0.6Hg0.4Te/HgTe/CdTe) have been implanted with Zn+ or Cd+ ions at different fluences and temperatures, and analyzed by Rutherford backscattering spectroscopy and channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e0c3455c413b7d29a417198fb06ccfd
https://doi.org/10.1063/1.359949
https://doi.org/10.1063/1.359949
Publikováno v:
Thin Solid Films. 249:266-270
A molecular beam epitaxy (MBE) system used for epitaxial growth of rare earth (Eu, Sm and Nd) compounds on CdTe is described. Owing to the high reactivity of the films, it appeared fruitful to connect this apparatus to a 2.5 MeV van de Graaff acceler
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44e8bc913a13bb8fbd9286325ec2881a
https://doi.org/10.1016/0040-6090(94)90773-0
https://doi.org/10.1016/0040-6090(94)90773-0
Autor:
Le Si Dang, A. Hamoudi, J.L. Pautrat, Guy Feuillet, Joel Cibert, Pierre-Henri Jouneau, E. Ligeon, Serge Tatarenko, K. Saminadayar
Publikováno v:
Journal of Applied Physics. 74:2524-2534
Implantation‐enhanced interdiffusion of CdTe‐ZnTe strained heterostructures is studied by photoluminescence, channeling, transmission electron microscopy, and secondary‐ion‐mass spectrometry. In the tellurides, implantation defects significan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9967759badf9bf63f57d68cb68b8da96
https://doi.org/10.1063/1.354693
https://doi.org/10.1063/1.354693
Publikováno v:
Journal of Applied Physics. 74:237-243
An interfacial layer (IL), about a nanometer thick, is produced by Sm deposition onto (001) CdTe grown by molecular‐beam epitaxy. This IL is studied by reflection high‐energy electron diffraction (RHEED), ion channeling, and x‐ray diffraction.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d99eb54017b26b7c7e084b5e1e154102
https://doi.org/10.1063/1.354151
https://doi.org/10.1063/1.354151
Autor:
A. Catherinot, L. Abello, G. Lucazeau, E. Ligeon, Alain Deneuville, C. Germain, J.C. Oberlin, F. Fontaine
Publikováno v:
Diamond and Related Materials. 2:746-752
Recently, a new method using carbon implantation at 300 K in bulk copper followed by excimer laser annealing has been proposed to synthesize diamond, with contradictory results. We use this technique on copper thin films with carbon implantation at 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d519d93c18a270d40dadb8ca898abb5f
https://doi.org/10.1016/0925-9635(93)90216-o
https://doi.org/10.1016/0925-9635(93)90216-o
Publikováno v:
Applied Surface Science. :821-824
It is shown that the deposition of Sm, Nd and Eu onto [001] CdTe results in the formation of an epitaxial rare-earth telluride layer. In the case of Sm and Nd, this layer acts as an efficient diffusion barrier allowing further epitaxial growth of met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb800df4ebbb4eb3c49fdfaa50f4d5f
https://doi.org/10.1016/0169-4332(93)90762-z
https://doi.org/10.1016/0169-4332(93)90762-z
Publikováno v:
Materials Science and Engineering: B. 16:211-214
Implantation-enhanced interdiffusion in CdTe/ZnTe quantum wells (QWs) has been studied using photoluminescence and secondary ion mass spectroscopy. In this system, a strong compositional disorder is produced by implantation alone. This is attributed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ba8ea905b71ee57e0ae8d903011602
https://doi.org/10.1016/0921-5107(93)90046-p
https://doi.org/10.1016/0921-5107(93)90046-p
Autor:
E. Ligeon, A. Hamoudi
Publikováno v:
Solid State Phenomena. :467-476
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78bc4e255c7acb467da3223765371e09
https://doi.org/10.4028/www.scientific.net/ssp.30-31.467
https://doi.org/10.4028/www.scientific.net/ssp.30-31.467
Autor:
K. Saminadayar, Guy Feuillet, Y. Gobil, Serge Tatarenko, A. C. Chami, E. Ligeon, Joel Cibert, Pierre-Henri Jouneau
Publikováno v:
Physica Scripta. :268-272
We want to review recent structural investigations of the heteroepitaxial interfaces between II-VI semiconductors deposited by Molecular Beam Epitaxy and GaAs substrates. The structure of the relaxed interfaces will firstly be dealt with by reference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73344f5b3be9b5e4633ba670c19fd031
https://doi.org/10.1088/0031-8949/1991/t35/053
https://doi.org/10.1088/0031-8949/1991/t35/053
Publikováno v:
Physics Letters A
Physics Letters A, Elsevier, 1990, 147, pp.234-239
Physics Letters A, Elsevier, 1990, 147, pp.234-239
Ni-P alloys were formed by P ion implantation into pure Ni single crystals at low (15 K) and high (300 K) temperature up to a metalloid ion concentration (≈0.12) such that the fractions of amorphous volume obtained at the maximum disorder depth wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef40d8e715062fd4a264c3768a64a44a
https://doi.org/10.1016/0375-9601(90)90639-6
https://doi.org/10.1016/0375-9601(90)90639-6