Zobrazeno 1 - 10
of 383
pro vyhledávání: '"E. Le Bourhis"'
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045006-045006-8 (2020)
Two experimental implementations of the double-cantilever beam experiment, developed to measure the bonding energy in wafer-bonded semiconductors, are compared for the first time. The comparison is carried out in two material combinations relevant to
Externí odkaz:
https://doaj.org/article/8443cffa75724424ac07cd009d70fbe2
Publikováno v:
Constitutive Models for Rubber XII ISBN: 9781003310266
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636044107f2caec048b58d029c702b25
https://doi.org/10.1201/9781003310266-40
https://doi.org/10.1201/9781003310266-40
Publikováno v:
Journal of Electronic Materials
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2019, 48 (11), pp.6985-6990. ⟨10.1007/s11664-019-07495-x⟩
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2019, 48 (11), pp.6985-6990. ⟨10.1007/s11664-019-07495-x⟩
(111)-oriented CdZnTe semiconductor material exhibits a crystal polarity and hence, a face terminated by Cd atoms, conventionally called (111) A face with an opposite face terminated by Te atoms, called (111) B face. These A and B faces have differen
Publikováno v:
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Jul 2020, Cracow, Poland. pp.1-7, ⟨10.1109/EuroSimE48426.2020.9152652⟩
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Jul 2020, Cracow, Poland. pp.1-7, ⟨10.1109/EuroSimE48426.2020.9152652⟩
The manufacturing process causes silicon wafer curvature because of the thermomechanical mismatch between each layers and the substrate. This curvature depends on many factors such as the properties of the used materials (Young’s modulus, Poisson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f54cd394fa97f50322d364d1c911e379
https://hal.archives-ouvertes.fr/hal-02972476
https://hal.archives-ouvertes.fr/hal-02972476
Autor:
Guillaume Kermouche, C. Fradet, Jean-Luc Loubet, Jean-Michel Bergheau, Gaylord Guillonneau, E. Le Bourhis, Florian Lacroix, Paul Baral
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (5), pp.6716-6726. ⟨10.1021/acsami.9b20286⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (5), pp.6716-6726. ⟨10.1021/acsami.9b20286⟩
International audience; A novel extrinsic method for the measurement of particle surface distribution in a carbon black-filled elastomer via nanoindentation is developed. This method is based on the measurement of the contact stiffness obtained from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b35d413e28c8ae990795ead3862e7cfb
https://hal.archives-ouvertes.fr/hal-02481338
https://hal.archives-ouvertes.fr/hal-02481338
Publikováno v:
MATEC Web of Conferences, Vol 321, p 11010 (2020)
Technical University of Denmark Orbit
Drouet, M, Pichon, L, Dubois, J, Le Bourhis, E & Christiansen, T L 2019, ' Surface engineering of titanium by multi-interstitial diffusion using plasma processing ' 14th World Conference on Titanium, Nantes, France, 10/06/2019-14/06/2019, .
Technical University of Denmark Orbit
Drouet, M, Pichon, L, Dubois, J, Le Bourhis, E & Christiansen, T L 2019, ' Surface engineering of titanium by multi-interstitial diffusion using plasma processing ' 14th World Conference on Titanium, Nantes, France, 10/06/2019-14/06/2019, .
Titanium and its alloys possess a range of highly interesting properties such as excellent corrosion resistance, high specific strength and biocompatibility, but suffers from poor wear resistance. The present work addresses plasma assisted surface tr
Autor:
Guillaume Geandier, P. Goudeau, R. Guillou, Cristian Mocuta, Pierre Godard, Pierre-Olivier Renault, E. Le Bourhis, Dominique Thiaudière, Damien Faurie
Publikováno v:
Surface and Coatings Technology
Surface and Coatings Technology, Elsevier, 2016, 308, pp.418-423. ⟨10.1016/j.surfcoat.2016.08.097⟩
Surface and Coatings Technology, Elsevier, 2016, 308, pp.418-423. ⟨10.1016/j.surfcoat.2016.08.097⟩
Thin film technology is pervasive in microelectronics, and in optical, magnetic or micro-mechanical devices. The mechanical performance of such nanoscale structure is crucial for applications since it is related to device lifetime. Furthermore, the m
Publikováno v:
Journal of Electronic Materials
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2019, 48 (10), pp.6108-6112. ⟨10.1007/s11664-019-07139-0⟩
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2019, 48 (10), pp.6108-6112. ⟨10.1007/s11664-019-07139-0⟩
HgCdTe (MCT) is a widely used semiconductor material used for manufacturing high-quality infrared detectors. At Sofradir, HgCdTe is grown by liquid phase epitaxy on lattice-matched CdZnTe substrates. Low threading dislocation densities (TDD) in the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfa15ca0ad8d85c1fd664e9d16c2ae46
https://hal-cnrs.archives-ouvertes.fr/hal-02351844
https://hal-cnrs.archives-ouvertes.fr/hal-02351844
Publikováno v:
2019 European Conference on Constitutive Models for Rubber
2019 European Conference on Constitutive Models for Rubber, Jun 2019, Nantes, France
Constitutive Models for Rubber XI ISBN: 9780429324710
2019 European Conference on Constitutive Models for Rubber, Jun 2019, Nantes, France
Constitutive Models for Rubber XI ISBN: 9780429324710
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f994d8f3bbdc8955460a340ae69e07b3
https://hal.archives-ouvertes.fr/hal-02268752
https://hal.archives-ouvertes.fr/hal-02268752
Publikováno v:
Semiconductor Science and Technology. 36:035015
Infrared detectors based on II–VI semiconductors are cooled from room temperature (RT) to cryogenic temperatures between 80 K and 150 K in order to operate with strong requirements regarding sensor performances for infrared detection. At these cryo