Zobrazeno 1 - 10
of 67
pro vyhledávání: '"E. Laskin"'
Autor:
Alain Chantre, E. Dacquay, Sorin P. Voinigescu, Pascal Chevalier, A. Tomkins, E. Laskin, K.H.K. Yau, B. Sautreuil
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:813-826
A D-band SiGe HBT total power radiometer is reported with a peak responsivity of 28 MV/W, a noise equivalent power (NEP) of 14-18 fW/Hz1/2, and a temperature resolution better than 0.35 K for an integration time of 3.125 ms. The 1/f noise corner of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::151240ed872d828634577e3c52e02bef
https://doi.org/10.1109/tmtt.2012.2184132
https://doi.org/10.1109/tmtt.2012.2184132
An 18-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70–80 GHz Band
Autor:
Sorin P. Voinigescu, B. Sautreuil, I. Sarkas, S.T. Nicolson, A. Tomkins, E. Laskin, Pascal Chevalier
Publikováno v:
IEEE Journal of Solid-State Circuits. 45:1968-1980
This paper describes a single-chip, 70-80 GHz wireless transceiver utilizing a direct mm-wave QPSK modulator. The transceiver was fabricated in a 130 nm SiGe BiCMOS technology and can operate at data rates in excess of 18 Gb/s. The peak gain of the z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76c691a15b554a296e3bbe8308621205
https://doi.org/10.1109/jssc.2010.2058011
https://doi.org/10.1109/jssc.2010.2058011
Autor:
S.T. Nicolson, Andreia Cathelin, Didier Belot, M. Khanpour, Patrice Garcia, E. Laskin, A. Tomkins, Sorin P. Voinigescu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:3477-3490
This paper reviews recent research conducted at the University of Toronto on the development of CMOS transceivers aimed at operation in the 90-170-GHz range. Unique nanoscale CMOS issues related to millimeter-wave circuit design in the 65-nm node and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f853af053b6692d2ae9300bfd5a89a38
https://doi.org/10.1109/tmtt.2009.2034071
https://doi.org/10.1109/tmtt.2009.2034071
Autor:
Sorin P. Voinigescu, E. Laskin
Publikováno v:
IEEE Journal of Solid-State Circuits. 41:2198-2208
An ultra-low-power, 27-1 PRBS generator with four, appropriately delayed, parallel output streams was designed. It was fabricated in a 150-GHz fT SiGe BiCMOS technology and measured to work up to 23 Gb/s. The four-channel PRBS generator consumes 235
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93e3084476578f5e73489ea5ef7d79e
https://doi.org/10.1109/jssc.2006.878112
https://doi.org/10.1109/jssc.2006.878112
Autor:
K.H.K. Yau, P. Westergaard, T. Chalvatzis, E. Laskin, A. Mangan, R. Beerkens, Ming-Ta Yang, M. Tazlauanu, Sorin P. Voinigescu, Timothy O. Dickson
Publikováno v:
IEEE Journal of Solid-State Circuits. 41:1830-1845
This paper provides evidence that, as a result of constant-field scaling, the peak fT (approx. 0.3 mA/mum), peak fMAX (approx. 0.2 mA/mum), and optimum noise figure NFMIN (approx. 0.15 mA/mum) current densities of Si and SOI n-channel MOSFETs are lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5182f05560e076e08d0a9a62c558d4c3
https://doi.org/10.1109/jssc.2006.875301
https://doi.org/10.1109/jssc.2006.875301
Autor:
L. Tarnow, Sorin P. Voinigescu, A. Tomkins, Pascal Chevalier, B. Sautreuil, Andreea Balteanu, E. Laskin, Jurgen Hasch, E. Dacquay, I. Sarkas
Publikováno v:
2012 19th International Conference on Microwaves, Radar & Wireless Communications.
This paper reviews the design considerations, integration issues, packaging and experimental performance of two, recently developed D-Band transceivers with on-die or above-IC antennas fabricated in a production SiGe BiCMOS technology. Potential solu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd10d7da9b3bfe623c14da4a918f020e
https://doi.org/10.1109/mikon.2012.6233499
https://doi.org/10.1109/mikon.2012.6233499
Publikováno v:
2011 IEEE Radio Frequency Integrated Circuits Symposium.
A radio transceiver with direct 5.3-Gb/s carrier modulation using a 60-GHz 2-bit IQ DAC, a zero-IF IQ receiver, a PLL with a single- 60-GHz VCO and an integrated crystal oscillator, was designed and fabricated in a 130-nm SiGe BiCMOS technology. It c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6190e6f76001d1acad7104c111dd6d41
https://doi.org/10.1109/rfic.2011.5940601
https://doi.org/10.1109/rfic.2011.5940601
A single chip, dual-functionality radio and FMCW radar transceiver, operating at 140 GHz is described. Doppler, loop-back, and 4Gb/s NLOS radio link demos, over the air and at distances exceeding one meter, are demonstrated. The second part of the pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::489e43c1a72883f0092646d535ec79c8
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd9bbd180592c650236d0f5da7d9521
https://doi.org/10.1109/bipol.2009.5314245
https://doi.org/10.1109/bipol.2009.5314245
Autor:
Sorin P. Voinigescu, Andreia Cathelin, S.T. Nicolson, Didier Belot, A. Tomkins, E. Laskin, M. Khanpour
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
This paper reviews recent research conducted at the University of Toronto on the development of imaging and radio transceivers in CMOS, aimed at operation in the 100-GHz to 200-GHz range. Two receivers fabricated in 65-nm GPLP CMOS technology are des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::607913ddf223e83ef83f3909ec652c15
https://doi.org/10.1109/mwsym.2009.5165665
https://doi.org/10.1109/mwsym.2009.5165665