Zobrazeno 1 - 10
of 16
pro vyhledávání: '"E. L. Shobolov"'
Publikováno v:
Semiconductors. 56:360-366
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa00576fe341f60607061b74b26e4ef
https://doi.org/10.1134/s1063782622070089
https://doi.org/10.1134/s1063782622070089
Publikováno v:
Semiconductors. 55:885-890
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba0bfde41f678b3ecf9677ba1f0487bb
https://doi.org/10.1134/s1063782621100225
https://doi.org/10.1134/s1063782621100225
Publikováno v:
Semiconductors. 54:518-522
The possibility of predicting the magnitude of the trapped charge in the buried oxide of silicon-on-insulator structures using the Poole–Frenkel effect is investigated. The conditions for the Poole–Frenkel effect in this layer are determined by m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bb57e958d3e3f0d2bde3112cd904904
https://doi.org/10.1134/s1063782620050127
https://doi.org/10.1134/s1063782620050127
Publikováno v:
Electronic Enginering.Semiconductor Devices. 254:29-37
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7a5f9be44d78fc6f79aa728ca57052
https://doi.org/10.36845/2073-8250-2019-254-3-29-37
https://doi.org/10.36845/2073-8250-2019-254-3-29-37
Publikováno v:
Semiconductors. 52:1114-1117
It is proposed that the Poole–Frenkel effect be applied to predict radiation-induced charge accumulation in thermal silicon dioxide. Various conduction mechanisms of thermal silicon dioxide are considered, the conditions of the appearance of the Po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d772c23fb93b4875e85e56449fe0cb
https://doi.org/10.1134/s1063782618090166
https://doi.org/10.1134/s1063782618090166
Autor:
E. L. Shobolov, O. P. Gus’kova, Alexey Mikhaylov, David Tetelbaum, V. M. Vorotyntsev, N. D. Abrosimova
Publikováno v:
Physics of the Solid State. 57:2164-2169
The incorporation of fluorine atoms into the silicon dioxide lattice upon F+ ion implantation and the formation of silicon (germanium) nanocrystals in SiO2 upon Si+ (Ge+) ion implantation have been numerically simulated. The calculations for F have b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::250a165a77a3dbd2c6373ce53e9a6bd6
https://doi.org/10.1134/s106378341511013x
https://doi.org/10.1134/s106378341511013x
Publikováno v:
Semiconductors. 45:1600-1603
The paper presents the results of studying a method for improving the crystal structure of o silicon epitaxial layer on a sapphire substrate by its preliminary amorphization with high-energy silicon ions followed by its recovery (solid-phase recrysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a7f2ccc3707183aa62a6e066027aeb
https://doi.org/10.1134/s1063782611120153
https://doi.org/10.1134/s1063782611120153
Publikováno v:
Inorganic Materials. 47:571-574
We demonstrate that the structural perfection of silicon layers on sapphire can be improved through high-temperature solid-state recrystallization after preamorphization of the most imperfect silicon layer near the silicon/sapphire interface by high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c0a3a2753f2466a5642e805fd13a504
https://doi.org/10.1134/s0020168511060239
https://doi.org/10.1134/s0020168511060239
Publikováno v:
Semiconductors. 40:314-318
Photoelectric spectroscopy applied to the barriers between a semiconductor on a metal and an electrolyte is used to study the formation of defects in the near-contact region of GaAs and Si as a result of Pd deposition onto the surface. It is shown th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::422d2cf9227c7a770522ca888871e002
https://doi.org/10.1134/s1063782606030110
https://doi.org/10.1134/s1063782606030110
Publikováno v:
Technical Physics. 48:592-597
The surface of hydrogen-sensitive GaAs Schottky diodes is modified by nonpolishing etching and by producing quantum wells and quantum dots in the space-charge region of the semiconductor. The sensitivity to hydrogen is found to increase by a factor o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e532ca086345cf57e065cf2b81ce23b
https://doi.org/10.1134/1.1576473
https://doi.org/10.1134/1.1576473