Zobrazeno 1 - 10
of 13
pro vyhledávání: '"E. L. Meeks"'
Publikováno v:
Review of Scientific Instruments. 64:1280-1286
Experimental measurements are made for the steady-state frequency response of a supported thermocouple wire. In particular, the effects of axial heat conduction are demonstrated for both a supported one material wire (type K) and a two material wire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5239d6f95ba84294e244db13a2e9cbd
https://doi.org/10.1063/1.1144080
https://doi.org/10.1063/1.1144080
Autor:
M J, Alter, M, Gallagher, T T, Morris, L A, Moyer, E L, Meeks, K, Krawczynski, J P, Kim, H S, Margolis
Publikováno v:
The New England journal of medicine. 336(11)
Little is known about the relation of the newly discovered hepatitis G virus (HGV) to the cause and clinical course of acute and chronic viral hepatitis.We selected patients from a surveillance study of acute viral hepatitis in four U.S. counties who
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a187fb2c69f1a7b96bbea234996cf98a
https://pubmed.ncbi.nlm.nih.gov/9229694
https://pubmed.ncbi.nlm.nih.gov/9229694
Autor:
M. J. ALTER, H. S. MARGOLIS, K. KRAWCZYNSKI, F. N. JUDSON, A. MARES, W. J. ALEXANDER, Y. H. PIN, J. K. MILLER, M. A. GERBER, R. E. SAMPLINER, E. L. MEEKS, M. J. BEACH
Publikováno v:
Survey of Anesthesiology. 37:244
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c85e857fde8b7d82b715504ded3a3c0
https://doi.org/10.1097/00132586-199308000-00069
https://doi.org/10.1097/00132586-199308000-00069
Autor:
A. Erbil, Christopher J. Summers, Katherine S. Pollard, Steven A. Ringel, P.V. Meyers, J. Welch, Ajeet Rohatgi, E. L. Meeks, C.H. Liu
Publikováno v:
Solar Cells. 24:185-194
Thin films of Cd1−xZnxTe and Cd1−xMnxTe with x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9af8a2015a6f8984e3912578bb8e889
https://doi.org/10.1016/0379-6787(88)90048-8
https://doi.org/10.1016/0379-6787(88)90048-8
Autor:
E. L. Meeks, D. W. Covington
Publikováno v:
Journal of Vacuum Science and Technology. 16:847-850
Motivated by the stringent material requirements that low noise FET’s place upon underlying buffer layers, the electrical properties of unintentionally doped layers of GaAs grown by MBE have been investigated. A relatively shallow acceptor (0.027 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9327a2216136f475ca931d9d0801515
https://doi.org/10.1116/1.570098
https://doi.org/10.1116/1.570098
Publikováno v:
Review of Scientific Instruments. 42:1446-1449
Two capacitive transducer designs have been used in this laboratory for amplitude measurements of longitudinal ultrasonic waves in solids. The designs are simple, can be fabricated easily, are rugged, and should prove to be a useful ultrasonic labora
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adad8f8c43c1eaf7d2bd011f0e838060
https://doi.org/10.1063/1.1684903
https://doi.org/10.1063/1.1684903
Autor:
E. L. Meeks, R. T. Arnold
Publikováno v:
Physical Review B. 1:982-988
The second-harmonic generation technique has been used to measure the combinations of third-order elastic constants ${C}_{111}$, $\frac{1}{4}({C}_{111}+3{C}_{112}+12{C}_{166})$, and $\frac{1}{9}({C}_{111}+6{C}_{112}+12{C}_{144}+24{C}_{166}+2{C}_{123}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e74ed3e61c90724922b87da3d7fc4ef9
https://doi.org/10.1103/physrevb.1.982
https://doi.org/10.1103/physrevb.1.982
Publikováno v:
Applied Physics Letters. 41:1073-1075
Molecular beam epitaxy has been used to grow good quality films of InGaAsP on InP substrates. The films have been characterized using infrared absorption, electroreflectance, x‐ray diffraction, reflection electron diffraction, and Hall measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::948ac53a2a89730aae204545119b00e1
https://doi.org/10.1063/1.93405
https://doi.org/10.1063/1.93405
The design of a molecular beam epitaxial growth system for HgCdTe alloys is described and has been used to grow CdTe and HgCdTe layers. Investigations of the properties of these layers by reflection electron diffraction, u.v. reflectivity and X-ray d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba11f94d8a3c88e54c0c75047d49155
https://doi.org/10.21236/ada141574
https://doi.org/10.21236/ada141574
Publikováno v:
Technical Issues in Infrared Detectors and Arrays.
A molecular beam epitaxy (MBE) system designed for the growth of Hg l-xCdxTe alloys is described. The system is equipped with both binary (CdTe) and elemental Hg, Cd, and Te sources and has been used to grow epitaxial layers of CdTe and Hg 1-xCdxTe w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec50f920ad90f2c6e2c05592628f04a1
https://doi.org/10.1117/12.935728
https://doi.org/10.1117/12.935728