Zobrazeno 1 - 9
of 9
pro vyhledávání: '"E. L. Martinet"'
Publikováno v:
Applied Physics Letters. 68:2720-2722
Electron Bragg mirrors grown on both sides of identical quantum wells were used for confining above‐barrier states at different energies. By varying the thickness of the electron mirrors, a confined above‐barrier state (a quasi‐bound state) cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d1b74ca48dc30931353c103b6f6dd2e
https://doi.org/10.1063/1.115576
https://doi.org/10.1063/1.115576
Publikováno v:
Applied Physics Letters. 66:265-267
We demonstrate difference frequency generation (DFG) of 8.66–11.34 μm wavelength light in intersubband InGaAs/AlAs quantum wells by mixing of 1.92 μm±25 nm and 2.39 μm±39 nm. The peak DFG second order nonlinear susceptibility χ(2) is measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6975d4ac669d5b0f892253cc701866be
https://doi.org/10.1063/1.113512
https://doi.org/10.1063/1.113512
Autor:
E. L. Martinet, Martin M. Fejer, James S. Harris, G. L. Woods, H. A. Schwettman, C. A. Rella, B. A. Richman, Hsiang-Chen Chui
Publikováno v:
Applied Physics Letters. 65:2630-2632
We report short wavelength second‐harmonic generation (SHG) spectroscopy of asymmetric coupled In0.6Ga0.4As/AlAs quantum wells (QWs). The QW is designed to show maximum second‐order nonlinear susceptibility χ(2) for SHG of 4 and 2 μm wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65cac389983e53eb0e463675425ba9ea
https://doi.org/10.1063/1.112585
https://doi.org/10.1063/1.112585
Autor:
Hsiang-Chen Chui, B. I. Richman, G. L. Woods, James S. Harris, H. A. Schwettman, C. A. Rella, Martin M. Fejer, E. L. Martinet
Publikováno v:
Applied Physics Letters. 64:3365-3367
We demonstrate intersubband absorption and second harmonic generation (SHG) in asymmetric coupled In0.6Ga0.4As/AlAs n‐type quantum wells (QWs) grown on a GaAs substrate. Intersubband absorption at 4.1 and 2.1 μm wavelengths, corresponding to the 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cca34c210eba781a5b8165b2828bd211
https://doi.org/10.1063/1.111276
https://doi.org/10.1063/1.111276
Publikováno v:
Applied Physics Letters. 64:736-738
We have demonstrated intersubband transition energies as high as 580 meV (2.1 μm wavelength) in InGaAs/AlGaAs quantum wells (QWs) grown on GaAs substrates. The well width dependence of intersubband transition energies in both In0.5Ga0.5As/Al0.45Ga0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d311d96add0433cdc223d27150f3d925
https://doi.org/10.1063/1.111050
https://doi.org/10.1063/1.111050
Tunable mid-infrared generation by mixing of near-infrared wavelengths in intersubband quantum wells
Publikováno v:
Proceedings of LEOS'94.
We demonstrate difference frequency generation of 8.66 /spl mu/m to 11.34 /spl mu/m light in intersubband InGaAs-AlAs quantum wells by mixing of 1.92 /spl mu/m/spl plusmn/25 nm and 2.39 /spl mu/m/spl plusmn/39 nm with a peak /spl chi//sup (2)/ of 12/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91611e8beff0bf8aabf29c7e78ea4c2f
https://doi.org/10.1109/leos.1994.586948
https://doi.org/10.1109/leos.1994.586948
Publikováno v:
Applied Physics Letters. 63:364-366
We report the first observation of intersubband transitions in InyGa1−yAs(y=0.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain relaxation before growth of the qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2a524f44a1ae0ec6ee36477a2b1938e
https://doi.org/10.1063/1.110044
https://doi.org/10.1063/1.110044
Autor:
E. L. Martinet, James S. Harris, G. L. Woods, H. C. Chui, Martin M. Fejer, C. A. Rella, B. J. Vartanian, Bruce A. Richman
Publikováno v:
Quantum Well Intersubband Transition Physics and Devices ISBN: 9789401045018
We report on some applications of high indium content quantum wells for mid-infrared (2–7μm) applications. Studies have been done to explore intra-valence band absorption in the mid-infrared between valence band hole states. Second harmonic genera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f2d8198b7b3b18b7907917f465ed565
https://doi.org/10.1007/978-94-011-1144-7_21
https://doi.org/10.1007/978-94-011-1144-7_21
Publikováno v:
Quantum Well Intersubband Transition Physics and Devices ISBN: 9789401045018
Large energy intersubband transitions are necessary for extending intersubband applications to the near-infrared (≤ 2μm wavelength) where compact diode laser based sources are available. By growing high indium content InGaAs / AlGaAs quantum wells
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eb0143b89897a4b792da10709d57a6b
https://doi.org/10.1007/978-94-011-1144-7_20
https://doi.org/10.1007/978-94-011-1144-7_20