Zobrazeno 1 - 2
of 2
pro vyhledávání: '"E. L. Fefelova"'
Autor:
M. M. Kulagina, E. V. Petryakova, A. P. Vasil’ev, M. A. Bobrov, V. A. Belyakov, Nikolai A. Maleev, S. N. Maleev, I. V. Makartsev, Yu. P. Kudryashova, F. A. Ahmedov, S. I. Troshkov, V. M. Ustinov, S. A. Blokhin, A. G. Fefelov, E. L. Fefelova, A. V. Egorov, A. G. Kuzmenkov
Publikováno v:
Technical Physics Letters. 45:1092-1096
A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4539ffa476858a0901881f61d5c920c0
https://doi.org/10.1134/s1063785019110075
https://doi.org/10.1134/s1063785019110075
Autor:
Yu. A. Guseva, V. N. Nevedomskii, M. M. Kulagina, A. G. Fefelov, M. A. Bobrov, N. A. Maleev, A. G. Kuzmenkov, I. V. Ladenkov, E. L. Fefelova, V. A. Belyakov, S. N. Maleev, A. P. Vasil'ev, Sergey A. Blokhin, V. M. Ustinov
Publikováno v:
Semiconductors. 51:1431-1434
The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df5bc7d6a0dac82b6e8f7bb498c1cf8
https://doi.org/10.1134/s1063782617110185
https://doi.org/10.1134/s1063782617110185