Zobrazeno 1 - 10
of 18
pro vyhledávání: '"E. L. Bullock"'
Publikováno v:
Surface Science. 499:244-250
The atomic origin of the photoemission Si 2p core level, shifted at 0.35 eV higher binding energy, at the As/Si(0 0 1)-2×1 surface, is investigated. The study is based on the determination of the surface structure by means of multiple scattering ana
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :539-543
The angular dependence of the Si 2p photoelectron intensity has been measured for a Cs-saturated Si(001)2 x 1 surface. A surface Si 2p component, which is attributed to the Si-dimer underneath the ...
Autor:
Dilano K. Saldin, Tadashi Abukawa, E. L. Bullock, X. Chen, Shozo Kono, Lars Johansson, Junji Tani, L. Patthey
Publikováno v:
Physical Review B. 55:R7319-R7322
Publikováno v:
Applied Surface Science. :88-94
We have studied the arsenic-terminated Si(111)-(1 × 1) surface with low energy photoelectron diffraction. On this ideally terminated surface, the Si 2p core-level consists of a bulk component and a single well separated surface component shifted to
Autor:
Roberto Gunnella, Lars Johansson, Shozo Kono, H.W. Yeom, C. R. Natoli, E. L. Bullock, L. Patthey, Roger Uhrberg
Publikováno v:
Surface Science. :352-357
As 3d spin-orbit branching ratios have been measured as functions of azimuthal angle for the 1 monolayer As Si (111) -(1 × 1) and As Si (001) -(2 × 1) systems using angle resolved photoemission. At a photon energy of hv = 72 eV, the branching ratio
Publikováno v:
Surface Science. :332-336
Photoelectron diffraction experiments from the As Si (111) -(1 × 1) surface are reported in which the surface and bulk components of the Si 2p core-level were measured as functions of azimuthal angle. The Si 2p surface component shows large intensit
Publikováno v:
Surface Science. :504-510
The nature of the chemical bond between the native oxide of Ti metal and various adsorbing species is essential to the understanding of the biocompatibility of Ti implants. We report here photoemission measurements of the Ti2p shake-up satellite stru
Publikováno v:
Physical Review Letters. 75:2538-2541
The submonolayer growth of Ge on single domain Si(001)-(2 X 1) has been studied using high resolution photoemission by monitoring the Ge 3d and Si 2p core levels as functions of coverage, electron ...
Publikováno v:
Zeitschrift f�r Physik B Condensed Matter. 93:71-76
Cold condensed (100 K) Dy-films, as well as DySb and DyTe were studied by photoelectron spectroscopy using HeII and HeII* excitation sources. The spectra were analyzed using the relative intensities and energy splittings of the individual 4f-multiple
Publikováno v:
Surface Science. :28-34
Photoelectron diffraction of the bulk and surface components of the Ge 3d core-level has been measured from the Ge(111)- c (2 × 8) reconstructed surface at room temperature and on the Ge(111)-(1 × 1) surface at 400°C. Calculations show good agreem