Zobrazeno 1 - 10
of 2 096
pro vyhledávání: '"E. L., Ivchenko"'
Autor:
E. Kirstein, D. R. Yakovlev, M. M. Glazov, E. A. Zhukov, D. Kudlacik, I. V. Kalitukha, V. F. Sapega, G. S. Dimitriev, M. A. Semina, M. O. Nestoklon, E. L. Ivchenko, N. E. Kopteva, D. N. Dirin, O. Nazarenko, M. V. Kovalenko, A. Baumann, J. Höcker, V. Dyakonov, M. Bayer
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
The Landé factors govern all the spin-related basic phenomena and are the key parameters which guide spintronics applications. Here, Kirstein et al. demonstrate a universal dependence of the Landé factors on the bandgap energy of several perovskite
Externí odkaz:
https://doaj.org/article/63003044b76b429cae19f8247b6d9cdf
Publikováno v:
Journal of Experimental and Theoretical Physics. 135:575-587
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb549d244c7c6a125f354498ac927aa
https://doi.org/10.1134/s1063776122100053
https://doi.org/10.1134/s1063776122100053
Autor:
A. V. Rodina, E. L. Ivchenko
Publikováno v:
Physical Review B. 106
We have developed a theory of Raman scattering with single and double spin flips of localized resident electrons and holes as well as nonequilibrium localized excitons in semiconductor perovskite crystals under optical excitation in the resonant exci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32433ec028bfefc02c532f157523b928
https://doi.org/10.1103/physrevb.106.245202
https://doi.org/10.1103/physrevb.106.245202
Optical transitions, exciton radiative decay, and valley coherence in lead chalcogenide quantum dots
We propose the concept of valley coherence and superradiance in the reciprocal space and show that it leads to an $N$-fold decrease of the bright exciton radiative lifetime in quantum dots (QDs) of an $N$-valley semiconductor. Next we explain why, de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b073cae15ff58de8b695e375d838774
http://arxiv.org/abs/2203.10295
http://arxiv.org/abs/2203.10295
Autor:
E. Kirstein, D. R. Yakovlev, M. M. Glazov, E. A. Zhukov, D. Kudlacik, I. V. Kalitukha, V. F. Sapega, G. S. Dimitriev, M. A. Semina, M. O. Nestoklon, E. L. Ivchenko, N. E. Kopteva, D. N. Dirin, O. Nazarenko, M. V. Kovalenko, A. Baumann, J. Höcker, V. Dyakonov, M. Bayer
The Landé or g-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1c657783ad6d42dfd6ced6cc2c7fd3a
http://arxiv.org/abs/2112.15384
http://arxiv.org/abs/2112.15384
Autor:
S. D. Ganichev, S. N. Danilov, M. Kronseder, D. Schuh, I. Gronwald, D. Bougeard, E. L. Ivchenko, A. Ya. Shul’man
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ff5ca9500e0ba900d006cfd9bb518f2
https://doi.org/10.1007/s10762-021-00823-5
https://doi.org/10.1007/s10762-021-00823-5
Autor:
A. V. Trifonov, Andreas D. Wieck, A. N. Kosarev, Leonid Golub, Dmitri R. Yakovlev, C. Sgroi, Sven Scholz, Manfred Bayer, E. L. Ivchenko, I. A. Yugova, Astrid Ludwig, I. A. Akimov
Publikováno v:
Physical Review B. 104
The authors report on a mechanism of strong enhancement of the band Land\'e parameter $q$ due to in-plane confinement of holes and the valence-band warping. This explains the surprisingly large in-plane hole $g$ factor in symmetric self-assembled (In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8155e4a13a29f4e47b612da129c3c1d
https://doi.org/10.1103/physrevb.104.l161405
https://doi.org/10.1103/physrevb.104.l161405
Autor:
Thierry Amand, V. K. Kalevich, Andrea Balocchi, E. L. Ivchenko, Xavier Marie, Alejandro Kunold
Publikováno v:
Semiconductors. 53:1175-1181
Experimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly polarized radiation onto the sample surface are reviewed. The experiments wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c86449c1492c696cb17199aa666845
https://doi.org/10.1134/s1063782619090070
https://doi.org/10.1134/s1063782619090070
Autor:
Alejandro Kunold, Andrea Balocchi, V. K. Kalevich, Xavier Marie, V. G. Ibarra-Sierra, J. C. Sandoval-Santana, R. S. Joshya, Thierry Amand, L. A. Bakaleinikov, Hélène Carrère, E. L. Ivchenko
Publikováno v:
Physical Review Applied. 15
We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows for electrical measurement of the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d36cd99403a0d9cc6ee9abf8b4eac3
https://doi.org/10.1103/physrevapplied.15.064040
https://doi.org/10.1103/physrevapplied.15.064040
In this work the above-band gap absorption spectrum in two-dimensional Dirac materials is calculated with account for the interaction between the photocarriers. Both the screened Rytova-Keldysh and pure Coulomb attraction potentials between the elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d9fadac753fe86fc201ec5e12b6f493