Zobrazeno 1 - 10
of 132
pro vyhledávání: '"E. Kuokstis"'
Autor:
Artūras Žukauskas, Saulius Miasojedovas, Saulius Juršėnas, E. Kuokstis, Vinod Adivarahan, M. Asif Khan, G. Kurilčik, Jinwei Yang, Michael Shur, C. Q. Chen
Publikováno v:
physica status solidi (c). 2:2770-2773
Luminescence transients have been studied in nonpolar a-plane fully coalesced epitaxial laterally overgrown (ELOG) GaN film grown over r-plane sapphire substrate under intense photoexcitation conditions. By increasing the excitation energy density (I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd2e4f9a1785e429145c502871f86117
https://doi.org/10.1002/pssc.200461345
https://doi.org/10.1002/pssc.200461345
Autor:
Jinwei Yang, C. Q. Chen, E. Kuokstis, Zheng Gong, Maxim S. Shatalov, Abigail Bell, Fernando Ponce, Vinod Adivarahan, M. Asif Khan, Riping Liu, M. Gaevski, H. P. Maruska
Publikováno v:
physica status solidi (c). 2:2732-2735
We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30 µm. Based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e769b3619b24834c93b4f9b8425412de
https://doi.org/10.1002/pssc.200461547
https://doi.org/10.1002/pssc.200461547
Autor:
R. Aleksiejunas, E. Kuokstis, Remis Gaska, Saulius Jursenas, Saulius Miasojedovas, Tadas Malinauskas, J. P. Zhang, M.A. Khan, Kestutis Jarasiunas, Arturas Zukauskas, M. Sudzius, Michael Shur, Jinwei Yang
Publikováno v:
physica status solidi (a). 202:820-823
Time-resolved four-wave mixing and photoluminescence techniques have been combined for studies of MOCVD-grown In x Ga 1-x N/GaN/sapphire heterostructures with different indium content (0.08 < x < 0.15). In-plane diffusion and recombination of spatial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bc3a56ea1dffc5aa685e41b87d4e7cc
https://doi.org/10.1002/pssa.200461351
https://doi.org/10.1002/pssa.200461351
Autor:
G. Kurilčik, Saulius Miasojedovas, V. Liuolia, M. Asif Khan, Saulius Juršėnas, C. Q. Chen, E. Kuokstis, Artūras Žukauskas, J. W. Yang, Vinod Adivarahan
Publikováno v:
Acta Physica Polonica A. 107:235-239
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d317efb0322b2cf67c6cf4205e2b9af
https://doi.org/10.12693/aphyspola.107.235
https://doi.org/10.12693/aphyspola.107.235
Autor:
J. W. Yang, Saulius Miasojedovas, C. Q. Chen, Saulius Juršėnas, G. Kurilčik, Vinod Adivarahan, Artūras Žukauskas, M. Asif Khan, E. Kuokstis
Publikováno v:
Acta Physica Polonica A. 105:567-573
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95ae91a443d62055eef3f5340aa528e9
https://doi.org/10.12693/aphyspola.105.567
https://doi.org/10.12693/aphyspola.105.567
Autor:
E. Kuokstis, M. Sūdžius, Tadas Malinauskas, Kęstutis Jarašiūnas, J. P. Zhang, M.A. Khan, Remis Gaska, V. Gudelis, Michael Shur, Ramūnas Aleksiejūnas, J. W. Yang, Qhalid Fareed
Publikováno v:
physica status solidi (c). :2686-2690
Time-resolved four-wave mixing has been performed in InGaN/GaN/sapphire heterostructures using picosecond pulses at 355 nm for carrier excitation. In-plane diffusion and recombination of carriers, confined in the front layer of 50-nm-thick InGaN, wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71f4fca4adc3c969ae19addf7c09f1d8
https://doi.org/10.1002/pssc.200303261
https://doi.org/10.1002/pssc.200303261
Autor:
Jae Ho Song, Jhang W. Lee, Jianping Zhang, J. W. Yang, E. Kuokstis, Mee-Yi Ryu, M. Asif Khan, Phil Won Yu
Publikováno v:
Solid State Communications. 127:661-665
Data are presented on the temperature dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) of AlInGaN grown by a pulsed metal organic chemical vapor deposition. The indium mole fractions of our samples are 0–3% and the PL mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c93184407b8df4f89b94d205f3fd900e
https://doi.org/10.1016/s0038-1098(03)00522-2
https://doi.org/10.1016/s0038-1098(03)00522-2
Autor:
M. Asif Khan, Jinwei Yang, Jianping Zhang, Wenhong Sun, A. Chitnis, E. Kuokstis, Hong Wang, Changqing Chen, Vinod Adivarahan, Maxim S. Shatalov, Shuai Wu
Publikováno v:
Journal of Electronic Materials. 32:364-370
In this paper, we report the pulsed atomic-layer epitaxy (PALE) of ultrahigh-quality AlN epilayers over basal-plane sapphire substrates and their use as templates to grow high-quality AlGaN layers with Al content ranging from 0.3 to 1. Symmetric/asym
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43a631c6fe0ed3e42a5882c83949b944
https://doi.org/10.1007/s11664-003-0159-2
https://doi.org/10.1007/s11664-003-0159-2
Publikováno v:
physica status solidi (b). 228:559-562
We report on UV photoluminescence (PL) dynamics in highly excited quaternary Al x In y Ga 1-x-y N epilayers and multiple quantum wells (MQWs). At low temperature, in MQWs we have observed new PL band which appeared at low excitation on the long-wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b99798edcdd3a6f9b037014cc60ca33c
https://doi.org/10.1002/1521-3951(200111)228:2<559::aid-pssb559>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:2<559::aid-pssb559>3.0.co
Autor:
Saulius Miasojedovas, Vinod Adivarahan, E. Kuokstis, Saulius Jursenas, C. Q. Chen, G. Kurilčik, Artūras Žukauskas, M. Asif Khan, J. W. Yang
Publikováno v:
Applied Physics Letters. 85:771-773
Carrier recombination dynamics in epitaxial a-plane GaN and fully coalesced epitaxial laterally overgrown (ELOG) a-plane GaN films has been studied by means of time-resolved photoluminescence under high photoexcitation. The results were compared with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4df5937867860bf45bae129f7c331d
https://doi.org/10.1063/1.1777409
https://doi.org/10.1063/1.1777409