Zobrazeno 1 - 10
of 131
pro vyhledávání: '"E. Kolawa"'
Publikováno v:
Journal of Physics D: Applied Physics. 31:2406-2411
Films of Ni–7 at% V, Pt, Pd, and Ta40Si14N46, each approximately 100 nm thick, were magnetron-deposited and interposed between about 250 nm thick copper overlayers and Bi2Te3 single-crystalline substrates. The samples were then annealed in vacuum u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32c02ad047dbb6dbb5bbe41a216aa2bb
https://doi.org/10.1088/0022-3727/31/19/007
https://doi.org/10.1088/0022-3727/31/19/007
Autor:
E. Kolawa, M.‐A. Nicolet, J. A. Leavitt, L. C. Jun. Mcintyre, J. M. Molarius, K. Morishita, J. L. Tandon
Publikováno v:
ChemInform. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b06fdee0c49d62b74a2bf2d7c6acae84
https://doi.org/10.1002/chin.199126285
https://doi.org/10.1002/chin.199126285
Publikováno v:
ChemInform. 22
This paper reports on reactively sputtered Ta-Si-N films that are investigated as diffusion barriers between silicon and Au layers. Analyses by backscattering spectrometry and electrical measurements on shallow n{sup +}p junction diodes reveal that a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4b98fc0e25ccb6938fe16f61b6d6eeb
https://doi.org/10.1002/chin.199140265
https://doi.org/10.1002/chin.199140265
Publikováno v:
Journal of Physics D: Applied Physics. 25:865-870
Transparent and conducting indium-doped zinc oxide (IZO) films were deposited by DC reactive magnetron sputtering from Zn+2.5 at.% In alloy target. Stabilization of the operating point in the transition region was achieved by means of controlling the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34f26d69ceca238fda6b664de494a7c1
https://doi.org/10.1088/0022-3727/25/5/019
https://doi.org/10.1088/0022-3727/25/5/019
Publikováno v:
2005 IEEE International Integrated Reliability Workshop.
A methodology for designing reliability into electronics for low-temperature applications has been developed. The proposed hot carrier aging lifetime projection model takes account of the evaluation of the hot carrier aging impact on the technology,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a580168a66c9471c4cdc4949227417e4
https://doi.org/10.1109/irws.2005.1609561
https://doi.org/10.1109/irws.2005.1609561
Publikováno v:
Applied Physics A: Materials Science & Processing. 65:43-45
Si23N43 (b3) and Ti35Si13N52 (c3), are synthesized by reactively sputtering a Ti5Si3 or a Ti3Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffusion barrier between a shallow Si n+p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7439567b4d5c0a6b624024f3a97f1926
https://doi.org/10.1007/s003390050539
https://doi.org/10.1007/s003390050539
Publikováno v:
Great Lakes Symposium on VLSI
A novel testability architecture has been developed for a mixed-signal VLSIC which has a functional architecture consisting of a microprocessor core, RF transceiver, and two voltage regulators. It permits a decoupling of analog/RF, digital, and power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f6345dfec565a76b65f59667caaa6b6
https://doi.org/10.1109/glsv.1999.757385
https://doi.org/10.1109/glsv.1999.757385
Publikováno v:
Great Lakes Symposium on VLSI
A monolithic RFIC in 0.25-micron fully-depleted SOI CMOS has been designed consisting of a microcoded 8-bit 33-MHz microprocessor, a 400-MHz 8-bit ASK-modulated RF transceiver and two integrated dc-dc voltage converters for power management. This arc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bede50c658e668ce9f5d2c8deea53cd
https://doi.org/10.1109/glsv.1999.757446
https://doi.org/10.1109/glsv.1999.757446
Publikováno v:
1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).
A metallization system for diamond compatible with Mo electroplating is presented. The deposition of the thin films is made by RF sputtering. 2 MeV /sup 4/He/sup ++/ backscattering spectroscopy, X-ray diffraction and sheet resistivity measurements ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9ca18bbca3d982a105fb48e2b2f740f
https://doi.org/10.1109/hitec.1998.676802
https://doi.org/10.1109/hitec.1998.676802
Publikováno v:
1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).
The thermal stability of W and Re metal contacts to GaN upon vacuum thermal annealing at 600, 800 and 1000/spl deg/C for 30 min is investigated by means of 2.0 MeV He/sup ++/ backscattering spectrometry, X-ray diffractometry and scanning electron mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4fe2cefd7b08d9d9a13823e1e122b91
https://doi.org/10.1109/hitec.1998.676773
https://doi.org/10.1109/hitec.1998.676773