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pro vyhledávání: '"E. Khutsishviliis"'
Autor:
M. R. Metskhvarishvili, I. Kalandadze, T. Qamushadze, G.P. Kekelidze, E. Khutsishviliis, Z. Chubinishvili
Publikováno v:
European Journal of Engineering and Technology Research. 6:75-78
The electrical properties of n-type crystals of InAs compound, grown from stoichiometric melt by the horizontal zone melting method, have been investigated in the temperature range of 4.2 K-300 K before and after fast neutron irradiation up to high i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b07404c2dc2a4758757e57b05c35fad
https://doi.org/10.24018/ejeng.2021.6.3.2401
https://doi.org/10.24018/ejeng.2021.6.3.2401
