Zobrazeno 1 - 10
of 45
pro vyhledávání: '"E. Khutsishvili"'
Autor:
E. Khutsishvili, Tengiz Qamushadze, Zurab Chubinashvili, Georgy Kekelidze, N. Kekelidze, Nana Kobulashvili
Publikováno v:
European Journal of Engineering and Technology Research. 6:31-35
Effective functioning of electronics in high- radiation environment requires developing of novel semiconductor systems with radiation-tolerant properties. In given work, in search of semiconductor materials with immunity to radiation, investigations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2df3d187755d08b63679104e42d04cb1
https://doi.org/10.24018/ejers.2021.6.1.1749
https://doi.org/10.24018/ejers.2021.6.1.1749
Publikováno v:
Transactions of A. Razmadze Mathematical Institute, Vol 172, Iss 3, Pp 404-408 (2018)
Optical phonon scattering mobility has been calculated using numerical methods, and a general program was developed in Matlab to calculate mobility due to scattering on optical phonons. Calculations were done for InAs material that was irradiated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f9bbc0332a29a3627798021a23dcf87
http://www.sciencedirect.com/science/article/pii/S2346809218300503
http://www.sciencedirect.com/science/article/pii/S2346809218300503
Autor:
N. Kekelidze, B. Kvirkvelia, E. Khutsishvili, T. Qamushadze, D. Kekelidze, R. Kobaidze, Z. Chubinishvili, N. Qobulashvili, G. Kekelidze
On the basis of InAs, InP and their InPxAs1-x solid solutions, the technologies were developed and materials were created where the electron concentration and optical and thermoelectric properties do not change under the irradiation with Ф = 2∙101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7fe10bd14764d22265d4d3c6006c5e5
Autor:
T. Kvernadze, V. Kulidzanishvili, V. Kakhiani, Teimuraz V. Zaqarashvili, M. Sikharulidze, D. Khutsishvili, E. Khutsishvili
Publikováno v:
Astrophysics and Space Science. 362
Spectroscopic observations of limb spicules were carried out during September 25 and October 17–19, 2012 in H $\alpha$ line using large 53-cm non-eclipsing coronagraph of Abastumani Astrophysical Observatory (Georgia). The spectrograph slit was loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45dd4025aea6bace9cea01e87f349bac
https://doi.org/10.1007/s10509-017-3213-x
https://doi.org/10.1007/s10509-017-3213-x
Publikováno v:
European Chemical Bulletin. 8:307
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df26aac460bddf39e703db32a175043
https://doi.org/10.17628/ecb.2019.8.307-312
https://doi.org/10.17628/ecb.2019.8.307-312
Publikováno v:
European Chemical Bulletin. 8:188
The system of triple In 1– x Ga x As continuous solid solutions allows the solution of the many problems of modern semiconductor technology as microelectronics, optoelectronics, and nanoelectronics. The remarkable manufactural properties of ternary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c18485803dce6e813df929577583e85d
https://doi.org/10.17628/ecb.2019.8.188-192
https://doi.org/10.17628/ecb.2019.8.188-192
Publikováno v:
European Chemical Bulletin. 8:85
The control of impurities at each stage of the purification process of Si is the primary topical problem in Si technology. The technique of determining the impurity composition should be multi-element and with low limit-detection of impurities. From
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b70c81d33ddfd48f45e45f1229020e8
https://doi.org/10.17628/ecb.2019.8.85-87
https://doi.org/10.17628/ecb.2019.8.85-87
Publikováno v:
European Chemical Bulletin. 8:19
Novel semiconductor-base nanotechnology is gradually moving into new applications in the world economy. Semiconductor application requires increasing of investigations in the direction of their properties. The main criterion of semiconductor suitabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ce7df049c1c2a3e784c2a5d6dcd5834
https://doi.org/10.17628/ecb.2019.8.19-22
https://doi.org/10.17628/ecb.2019.8.19-22
Publikováno v:
Astronomy & Astrophysics. 449:L35-L38
Height series of H${\alpha}$ spectra in solar limb spicules obtained with the 53 cm coronagraph of the Abastumani Astrophysical Observatory are analyzed. Each height series covered 8 different heights beginning at 3800 km above the photosphere. The s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4c0b75857bf1350cbd4e91da78a8018
https://doi.org/10.1051/0004-6361:200600018
https://doi.org/10.1051/0004-6361:200600018
Autor:
David Khomasuridze, N. Kekelidze, L. Milovanova, David Kekelidze, E. Khutsishvili, Z. Davitaya, B. Kvirkvelia
Publikováno v:
Acta Physica Polonica A. 121:27-29
The parameters of potential well, which arises around inhomogeneities of technological origin in n-InP, have been analyzed using electrical measurements data. Model of spherical space-charge regions surrounding disordered regions was applied for expl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0d57583eab5724b1ba661de731a2fd8
https://doi.org/10.12693/aphyspola.121.27
https://doi.org/10.12693/aphyspola.121.27