Zobrazeno 1 - 10
of 18
pro vyhledávání: '"E. Katsia"'
Autor:
Mariangela Gioannini, E. Katsia, Federica Cappelluti, Peter Mulder, Mircea Guina, Jiang Wu, G. Gervasio, Tapio Niemi, Timo Aho, Huiyun Liu, Giovanni Ghione, Dongyoung Kim, G.M.M.W. Bissels, J.J. Schermer, Gerard Bauhuis, M. Cimino
Publikováno v:
E3s Web of Conferences, 16, 1-8
E3s Web of Conferences, 16, pp. 1-8
E3S Web of Conferences
E3S Web of Conferences, Vol 16, p 03007 (2017)
E3s Web of Conferences, 16, pp. 1-8
E3S Web of Conferences
E3S Web of Conferences, Vol 16, p 03007 (2017)
One of the key issues in the design and development of a satellite Photovoltaic Assembly (PVA) is the trade-off to be made between the available volume located to the PVA, its mass and the total amount of power that the solar panels have to guarantee
Autor:
S. Ferrari, Roar R. Søndergaard, E. Katsia, Eva Bundgaard, B. Kutrzeba-Kotowska, Grazia Tallarida, Frederik C. Krebs
Publikováno v:
Organic electronics
9 (2008): 1044–1050.
info:cnr-pdr/source/autori:Katsia, E; Tallarida, G; Kutrzeba-Kotowska, B; Ferrari, S; Bundgaard, E; Sondergaard, R; Krebs, FC/titolo:Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography/doi:/rivista:Organic electronics (Print)/anno:2008/pagina_da:1044/pagina_a:1050/intervallo_pagine:1044–1050/volume:9
9 (2008): 1044–1050.
info:cnr-pdr/source/autori:Katsia, E; Tallarida, G; Kutrzeba-Kotowska, B; Ferrari, S; Bundgaard, E; Sondergaard, R; Krebs, FC/titolo:Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography/doi:/rivista:Organic electronics (Print)/anno:2008/pagina_da:1044/pagina_a:1050/intervallo_pagine:1044–1050/volume:9
The integration of polymers into microelectronic devices is a challenging task, because the standard processes used in device fabrication, most notably photolithography, are not fully compatible with such materials. In this study, we demonstrate a po
Publikováno v:
High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 11:467-475
Publikováno v:
Thin Solid Films. :603-607
An investigation of the effect of the deposition pressure (133.3–1333 Pa) on the Ac-Si:H crystallinity, stress and thermal stability was performed. The films were deposited from SiH4/H2 discharges under constant power conditions and with constant s
Publikováno v:
Thin Solid Films. :285-289
A study of the role of the main plasma parameters on the transition from microcrystalline to amorphous silicon growth was performed, considering also the possibility to use plasma diagnostics for the prediction of this transition. Experimental measur
Publikováno v:
Solar Energy Materials and Solar Cells. 87:157-167
The effect of the total SiH4/H2 gas pressure (1–10 Torr) on the growth rate, the film crystallinity and the nature of hydrogen bonding of microcrystalline silicon thin films deposited by 13.56 MHz plasma-enhanced chemical vapour deposition (PECVD)
Autor:
Frederik C. Krebs, Roar R. Søndergaard, Eva Bundgaard, Grazia Tallarida, E. Katsia, S. Ferrari
Publikováno v:
Microelectronic engineering 85 (2008): 2439–2441.
info:cnr-pdr/source/autori:Katsia, E; Tallarida, G; Ferrari, S; Bundgaard, E; Sondergaard, R; Krebs, FC/titolo:Integration of organic based Schottky junctions for crossbar non-volatile memory applications/doi:/rivista:Microelectronic engineering/anno:2008/pagina_da:2439/pagina_a:2441/intervallo_pagine:2439–2441/volume:85
info:cnr-pdr/source/autori:Katsia, E; Tallarida, G; Ferrari, S; Bundgaard, E; Sondergaard, R; Krebs, FC/titolo:Integration of organic based Schottky junctions for crossbar non-volatile memory applications/doi:/rivista:Microelectronic engineering/anno:2008/pagina_da:2439/pagina_a:2441/intervallo_pagine:2439–2441/volume:85
Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organic
Autor:
Michele Perego, B. Kutrzeba-Kotowska, S. Ferrari, Frederik C. Krebs, Marek Godlewski, N. Huby, V. Osinniy, E. Katsia, G. Luka, Elzbieta Guziewicz, Grazia Tallarida
Publikováno v:
Katsia, E, Huby, N, Tallarida, G, Kutrzeba-Kotowska, B, Perego, M, Ferrari, S, Krebs, F C, Guziewicz, E, Godlewski, M, Osinniy, V & Luka, G 2009, ' Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications ', Applied Physics Letters, vol. 94, no. 14, pp. 143501 . https://doi.org/10.1063/1.3114442
Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7104fcf04493df4efc82c8bfa985b44f
https://orbit.dtu.dk/en/publications/cb96d0bf-569f-4254-8b6d-4dfaa6017abb
https://orbit.dtu.dk/en/publications/cb96d0bf-569f-4254-8b6d-4dfaa6017abb
Publikováno v:
Journal of Applied Physics. 97:073303
An investigation of the effect of the total gas pressure on the deposition of microcrystalline thin films form highly diluted silane in hydrogen discharges was carried out at two different frequencies. The study was performed in conditions of constan
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