Zobrazeno 1 - 3
of 3
pro vyhledávání: '"E. K. Pavelchek"'
Autor:
Gary S. Calabrese, R. Sinta, B.W. Dudley, S.K. Jones, J. F. Bohland, P.W. Freeman, E. K. Pavelchek
Publikováno v:
Microelectronic Engineering. 21:231-234
SAHRTM [1–3] ( S ilylated A cid H ardened R esist) employs chemically amplified crosslinking of exposed areas and results in positive-toned features following dry development. Two undersirable characteristics of this process have been identified an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::420cac6f0302977d02acfff0835ed09c
https://doi.org/10.1016/0167-9317(93)90062-a
https://doi.org/10.1016/0167-9317(93)90062-a
Autor:
E. K. Pavelchek, G. S. Calabrese, S. M. Bobbio, J. F. Bohland, M. Gulla, L. N. Abali, P. Sricharoenchaikit
Publikováno v:
Microelectronic Engineering. 13:93-96
G-line photoresists are exposed at 248 nm and subjected to aqueous development and electroless plating to produce submicron, metallized photoresist patterns. The high plasma etch resistance of the photoresist/metal structure allows for efficient patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a73e6b19c80c4c01951f2b7f080aa1d3
https://doi.org/10.1016/0167-9317(91)90055-i
https://doi.org/10.1016/0167-9317(91)90055-i
Autor:
E. K. Pavelchek, R. H. Doremus
Publikováno v:
Journal of Materials Science. 9:1803-1808
The strength of soda-lime glass at liquid nitrogen temperature after various amounts of etching was measured. A median crack length of 6 μm was calculated from the results and a model of the etching process. It was found that the rate of etching at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da4e105b97fba51109eccec67253523a
https://doi.org/10.1007/bf00541749
https://doi.org/10.1007/bf00541749