Zobrazeno 1 - 10
of 70
pro vyhledávání: '"E. K. Baranova"'
Publikováno v:
Semiconductors. 50:1107-1111
We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its par
Autor:
E. K. Baranova, A. M. Gusev
Publikováno v:
Educational resources and technology. :88-96
Publikováno v:
Russian Journal of Physical Chemistry A. 87:257-264
The optical absorption spectra of water silica sols containing nanoparticles (NPs) of metals (Ag, Pd, Fe, and Pt) are investigated. Silica sols are obtained from natural hydrothermal solutions via membrane concentration (ultrafiltration). Water sols
Autor:
E. K. Baranova, A. A. Revina
Publikováno v:
Protection of Metals and Physical Chemistry of Surfaces. 46:452-455
Silver nanoparticles obtained in reverse micelles using the methods of radiation-chemical and chemical synthesis are well adsorbed on the surface of different carbon materials (active carbons, activated hydrocarbon fibers, fabrics, including CNT and
Publikováno v:
Russian Journal of Physical Chemistry A. 82:1002-1009
The optical properties of aqueous solutions of colloidal silica were studied by photon correlation spectroscopy and spectrophotometry. Photon correlation spectroscopy measurements were taken at a 633 nm wavelength of monochromatic laser radiation. Au
Publikováno v:
Radiation Effects and Defects in Solids. 158:771-781
The processes of accumulation of ion implanted hydrogen in blisters in silicon and its release during the thermal treatment from 350 to 1020 °C have been studied by optical techniques. It was established that accumulation of gaseous hydrogen inside
Publikováno v:
Radiation Effects and Defects in Solids. 116:195-197
Anomalies of the implanted dopant diffusion in Si often cannot be interpreted unambiguously.1 The presence of free vacancies in the layer results in the essential enhancement of boron diffusion in Si.2 There is a temperature for each semiconductor ma
Publikováno v:
Semiconductors. Aug2016, Vol. 50 Issue 8, p1107-1111. 5p.
Publikováno v:
Physical and Technical Problems of SOI Structures and Devices ISBN: 9789401040525
Silicon layers implanted with high doses of oxygen and hydrogen ions (separately and consequently) were investigated by IR-spectroscopy technique. The absorption bands centered at 615, 630, 890, and 2110 cm−1 were observed in the case of only hydro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6d3f7b41c167e4cbb361f809c82a2c
https://doi.org/10.1007/978-94-011-0109-7_15
https://doi.org/10.1007/978-94-011-0109-7_15
Autor:
Malashina, A. G.1 (AUTHOR) amalashina@hse.ru
Publikováno v:
Doklady Mathematics. 2023 Suppl 2, Vol. 108, pS282-S292. 11p.