Výsledky vyhledávání - "E. Jalaguier"

Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms

Autor: Christophe Vallée, Patrice Gonon, M. Saadi, Ahmad Bsiesy, Fathi Jomni, E. Jalaguier

Publikováno v: Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics, Springer Verlag, 2020, 31 (16), pp.13487-13495. ⟨10.1007/s10854-020-03903-9⟩
Journal of Materials Science: Materials in Electronics, 2020, 31 (16), pp.13487-13495. ⟨10.1007/s10854-020-03903-9⟩

Resistance switching is studied in conductive bridge memory structures made from atomic layer deposited HfO2 and Ag active electrode. Inert electrode is varied by using different substrates (TiN, W, Pt). HfO2 crystallinity is modified by varying the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa1f13a4389edf4a9d2e9b247f8b2062
https://hal.univ-grenoble-alpes.fr/hal-02916808

Zobrazit plný text záznamu

Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner

Autor: N. Guillaume, M. Azzaz, S. Blonkowski, E. Jalaguier, P. Gonon, C. Vallée, T. Blomberg, M. Tuominen, H. Sprey, S. Bernasconi, C. Charpin-Nicolle, E. Nowak

In this work, we propose a novel integration in order to significantly reduce the High Resistance State vari-ability and to improve thermal stability in Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device featuring a metallic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52fa07f8cfb143e1c0975225347b7fa4

Zobrazit plný text záznamu

Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories

Autor: M. Bonvalot, S. Martinie, R. Sommer, Ph. Blaise, E. Nowak, Christelle Charpin-Nicolle, S. Belahcen, M.L. Cordeau, E. Jalaguier, S. Bernasconi, B. Eychenne, A. Persico

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2020, 221, pp.111194. ⟨10.1016/j.mee.2019.111194⟩
Microelectronic Engineering, 2020, 221, pp.111194. ⟨10.1016/j.mee.2019.111194⟩

International audience; In this work, we study the impact of roughness of TiN bottom electrode on the forming voltage of 1R TiN/HfO$_2$/Ti/TiN based ReRAM devices. A novel and atypical strategy is proposed to induce a controlled roughness of the bott

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6eaffd9a32936ba97cf917c21f1a5aea

Zobrazit plný text záznamu

Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3

Autor: A. Benoist, S. Bernasconi, G. Audoit, C. Guedj, Philippe Candelier, C. Fenouillet-Beranger, T. Dewolf, L. Perniola, E. Jalaguier, S. Jeannot, C. Charpin, Stephane Denorme, E. Vianello, M. Azzaz, Daniele Garbin, C. Cagli

Publikováno v: Solid-State Electronics. 125:182-188

In this article, the reliability of HfO2-based RRAM devices integrated in an advanced 28 nm CMOS 16 kbit demonstrator is presented. In order to improve the memory performance, a thin Al2O3 layer is inserted in the HfO2-based memory stack (TiN/Ti/HfO2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::69d5eccfc71c5f64a81a84ad88c54bc6
https://doi.org/10.1016/j.sse.2016.07.007

Zobrazit plný text záznamu

Electrical characterization of HfO2 based resistive RAM devices having different bottom electrode metallizations

Autor: E. Jalaguier, S. B. Tekin Tubitak-Bilgem, Z. E. Kaya Tubitak-Bilgem, S. Kalem Tubitak-Bilgem

Publikováno v: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

HfO 2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods. Memory stacks used for measurements, named MARS, ha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::195a3b721b355380662d5178ec98cb31
https://doi.org/10.1109/ulis.2018.8354734

Zobrazit plný text záznamu

XAFS atomistic insight of the oxygen gettering in Ti/HfO2 based OxRRAM

Autor: Jean-Luc Deschanvres, Hubert Renevier, Laetitia Rapenne, R. Viennet, E. Jalaguier, V. Jousseaume, Hervé Roussel, Maria Grazia Proietti

Publikováno v: Zaguán. Repositorio Digital de la Universidad de Zaragoza
instname
Digital.CSIC. Repositorio Institucional del CSIC

Hafnia-based resistive memories technology has come to maturation and acceded to the market of nonvolatile memories. Nevertheless, the physical mechanisms involved in resistive switching are not yet fully understood and the numerous ab initio simulat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97d7ba23781112fcd26a4d6f6f531f3d
http://zaguan.unizar.es/record/74937

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání