Zobrazeno 1 - 4
of 4
pro vyhledávání: '"E. J. Weitzman"'
Autor:
K. C. Yu, J. Defilippi, R. Tiwari, T. Sparks, D. Smith, M. Olivares, S. Selinidis, J. Zhang, K. Junker, G. Braekelmann, J. Farkas, K. S. Lee, S. Filipiak, M. Lindell, J. K. Watanabe, J. T. Wetzel, D. Jawarani, M. T. Herrick, N. G. Cave, C. C. Hobbs, J. J. Stankus, R. Mora, M. Freeman, T. Van Gompel, D. Denning, B. W. Fowler, S. Garcia, T. Newton, D. Pena, C. Keyes, T. Nguyen, S. Kirksey, T. Neil, J. Conner, J. J. Lee, R. Fox, R. Hershey, P. Crabtree, D. D. Sieloff, R. Blumenthal, E. J. Weitzman
Publikováno v:
MRS Proceedings. 565
The recent introduction of dual inlaid Cu and oxide based interconnects within sub-0.25μm CMOS technology has delivered higher performance and lower power devices. Further speed improvements and power reduction may be achieved by reducing the interc
Autor:
E. J. Weitzman, Kyu C. Park
Publikováno v:
IBM Journal of Research and Development. 22:607-612
An electron-beam evaporation process has been developed that is capable of depositing stable, thick, borosilicate glass films (0.5-50 µm) on various substrates at a rate exceeding 0.5 µm/min. A very low stress of 4-10 × 107 N/m2 in compression was
Autor:
K. C. Park, E. J. Weitzman
Publikováno v:
Journal of Vacuum Science and Technology. 14:1318-1319
Autor:
E. J. Weitzman, C. M. Osburn
Publikováno v:
Journal of The Electrochemical Society. 119:603