Zobrazeno 1 - 6
of 6
pro vyhledávání: '"E. J. Weisbrod"'
Autor:
Don Pettibone, Pawitter J. S. Mangat, Bing Lu, D. J. Resnick, R. L. Engelstad, William J. Dauksher, E. J. Weisbrod, James R. Wasson, J. Sohn
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:3086
Extreme ultraviolet lithography (EUVL) is a leading candidate for next generation lithography with the potential for extendibility beyond the 45 nm node. The three-layer absorber stack for EUVL reticles consists of an absorber, repair buffer and etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48409bc69d458a8e55fca6b66221325d
https://doi.org/10.1116/1.1625962
https://doi.org/10.1116/1.1625962
Autor:
E. J. Weisbrod, Da Zhang, Pawitter J. S. Mangat, S. B. Clemens, Peter L. G. Ventzek, Roxann L. Engelstad, William J. Dauksher, K. H. Smith, Shahid Rauf, C. J. Martin
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:3047
Lithographic mask development requires that attention be paid to all aspects of mask manufacturing. As feature sizes and tolerable errors decrease, processes must be investigated for their effect on final mask quality. One potential area of concern f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a1c19c1221e5db1a9ddec34309b6db2
https://doi.org/10.1116/1.1523028
https://doi.org/10.1116/1.1523028
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:2891
Step and flash imprint lithography (SFIL) is an alternative approach for printing sub-100 nm features that relies on chemical and mechanical techniques to transfer patterns. The imprint process requires no projection optics and is performed at room t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9350b9807058e26b64b685bc2d5f19e7
https://doi.org/10.1116/1.1521743
https://doi.org/10.1116/1.1521743
Autor:
D. J. Resnick, E. J. Weisbrod, James R. Wasson, Bing Lu, Pawitter J. S. Mangat, Zorian S. Masnyj, Kevin J. Nordquist
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:3029
Proximity effects and resist heating during high energy electron-beam (e-beam) patterning of extreme ultraviolet lithography (EUVL) mask were investigated for the 50 nm node and beyond. These effects were observed experimentally on both silicon wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081cb2cc693a0e38fd71f024a633ac5d
https://doi.org/10.1116/1.1521745
https://doi.org/10.1116/1.1521745
Autor:
William H. Semke, J. B. Bailey, R. L. Engelstad, J. J. Festa, Edward G. Lovell, E. J. Weisbrod
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3221
The ability to clean advanced lithographic masks in a cost-effective manner is becoming increasingly important as the semiconductor industry continues integrated circuit development with ever-decreasing feature sizes. The plasma mechanical activation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4adb2c21e4248a0e0d2ea91ea843502b
https://doi.org/10.1116/1.1314369
https://doi.org/10.1116/1.1314369
Autor:
E. J. Weisbrod, C. J. Martin, Pawitter J. S. Mangat, D. J. Resnick, Zorian S. Masnyj, Roxann L. Engelstad, Eric S. Ainley, Kevin J. Nordquist
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3242
The use of chemically amplified (CA) resists in integrated circuit fabrication is accepted in semiconductor manufacturing as a way to achieve high resolution with excellent critical dimension (CD) control and etch selectivity. The use of CA resists f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a99c24dead4ff6c14e5c7dd925df4ea
https://doi.org/10.1116/1.1324642
https://doi.org/10.1116/1.1324642