Zobrazeno 1 - 10
of 12
pro vyhledávání: '"E. J. Rubio"'
Autor:
E. J. Rubio, Manjula I. Nandasiri, Vaithiyalingam Shutthanandan, Sandeep Manandhar, T. E. Mates, Chintalapalle V. Ramana
Publikováno v:
The Journal of Physical Chemistry C. 120:26720-26735
Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron cosputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achiev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92614320c51dc83f665c892d1533a507
https://doi.org/10.1021/acs.jpcc.6b05487
https://doi.org/10.1021/acs.jpcc.6b05487
Autor:
M. Noor-A-Alam, Chintalapalle V. Ramana, Manuel J. Hernandez, E. J. Rubio, M. Vargas, G. A. Lopez
Publikováno v:
Ceramics International. 41:6187-6193
Nanocrystalline hafnium oxide (HfO 2 ) thin films have been produced under variable reactive oxygen (O 2 ) fractionation ( Г ) employing Hf metal for reactive sputter-deposition. The effect of Г on the HfO 2 compound formation, structure, morpholog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e7b2b4f53c57fce34ce88344231140c
https://doi.org/10.1016/j.ceramint.2014.12.141
https://doi.org/10.1016/j.ceramint.2014.12.141
Publikováno v:
Applied Nanoindentation in Advanced Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a81ffa09146cdaa470fb0b6fc5dc9aeb
https://doi.org/10.1002/9781119084501.ch3
https://doi.org/10.1002/9781119084501.ch3
Autor:
E. J. Rubio, L. D. Pokrovsky, Chintalapalle V. Ramana, Vladimir N. Kruchinin, Igor P. Prosvirin, Victor V. Atuchin
Publikováno v:
The Journal of Physical Chemistry C. 2014. Vol. 118, № 25. P. 13644-13651
Nanocrystalline yttrium oxide (Y2O3) thin films were made by sputter deposition onto silicon (100) substrates keeping the deposition temperature fixed at 300 °C. The surface/interface chemistry, Y–O bonding, and optical constants of the Y2O3 film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04531fdcddb9fde67a37c9688152afae
https://doi.org/10.1021/jp502876r
https://doi.org/10.1021/jp502876r
Publikováno v:
Solid State Communications. 184:34-39
We report on the frequency (f=20 Hz–1 MHz) and temperature (T=300–973 K) dependent dielectric properties of hafnium (Hf) incorporated cobalt ferrite (CoF2−xHfxO4 (CFO–Hf); x=0.00–0.20). The dielectric constant (e') of CFO–Hf is T-independ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44406ab4ebb099c3d2c10bb3e6641724
https://doi.org/10.1016/j.ssc.2013.12.003
https://doi.org/10.1016/j.ssc.2013.12.003
Autor:
S.W. Stafford, German Martinez, E. J. Rubio, Vaithiyalingam Shutthanandan, M. Noor-A-Alam, Chintalapalle V. Ramana
Publikováno v:
Surface and Coatings Technology. 236:142-148
Nanostructured yttria-stabilized hafnia (YSH) coatings were grown on α-Al 2 O 3 substrates with variable coating thickness in a wide range of ~ 50 nm to 1 μm. Microstructure and thermal oxidation behavior of the grown YSH coatings were studied empl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaee7aae2a5c99e02f9254b63e78e736
https://doi.org/10.1016/j.surfcoat.2013.09.004
https://doi.org/10.1016/j.surfcoat.2013.09.004
Publikováno v:
Optical Materials. 35:1728-1734
Yttrium-doped hafnium oxide (YDH) nanocrystalline films were produced by sputter-deposition at a substrate temperature of 400 °C. The deposition was made onto Si (1 0 0) and optical grade quartz substrates with variable deposition time to produce YD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b2466d4b5d294e85ef4747a515a6b9
https://doi.org/10.1016/j.optmat.2013.05.017
https://doi.org/10.1016/j.optmat.2013.05.017
Autor:
E. J. Rubio, Suntharampillai Thevuthasan, S. Sampath Kumar, Vaithiyalingam Shutthanandan, Chintalapalle V. Ramana, M. Noor-A-Alam, Sandeep Manandhar, German Martinez
Publikováno v:
The Journal of Physical Chemistry C. 117:4194-4200
Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts = 25–800 °C). The structural characteristics and optical properties of Ga2O3 films were evaluated using X-ray diffra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8222ad7539409bb5ed6480fcbe5e30a4
https://doi.org/10.1021/jp311300e
https://doi.org/10.1021/jp311300e
Publikováno v:
Journal of Applied Physics. 115:133511
Titanium (Ti) doped tungsten oxide (WO3) thin films were grown by co-sputter deposition of W and Ti metal targets. The sputtering powers to the W and Ti were kept constant at 100 W and 50 W, respectively, while varying the growth temperature (Ts) in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b0b68741ee32bc34b66a619292cc564
https://doi.org/10.1063/1.4869665
https://doi.org/10.1063/1.4869665
Autor:
Samantha McPeak, John T. Grant, E. J. Rubio, Chintalapalle V. Ramana, A. Miranda Gallardo, Sushma Kotru, C. D. Barraza
Publikováno v:
Journal of Applied Physics. 115:043508
Gallium oxide (Ga2O3) thin films were made by sputter deposition employing a Ga2O3 ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (Ts), from 25 to 600 °C. The effect of Ts on the chemical bonding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16798913267246368c7ce087274fe741
https://doi.org/10.1063/1.4862186
https://doi.org/10.1063/1.4862186