Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E. J. Hartford"'
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
Developing doping technologies for the channel region of CMOS devices for 180 nm technology and beyond requires accurate profiles of electrically active dopants. We have recently improved the accuracy of spreading resistance profiles on sub-80 nm sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c2962251c40fa8ca0063faf6b12babb
https://doi.org/10.1109/iit.1998.813811
https://doi.org/10.1109/iit.1998.813811
Publikováno v:
Journal of Applied Physics. 67:4552-4554
A first‐principles tight‐binding formulation of the paramagnetic spin susceptibility is developed to study the temperature dependence of the magnetic properties of transition metals. The formulation, which includes many‐body enhancements, has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2641d9ca9dee730fb3fc71f0d8ff798a
https://doi.org/10.1063/1.344867
https://doi.org/10.1063/1.344867
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
In the past, resistivity and carrier density profiles derived from spreading resistance measurements have been satisfactorily verified by comparing a doped layer’s measured sheet resistance, ρs, with a sheet resistance value calculated from the on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cff2a4f88c5bf25cf161591fde6cd783
https://doi.org/10.1063/1.56799
https://doi.org/10.1063/1.56799
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:401
Over the years, several methods have emerged for determining the probe contact radius in spreading resistance measurements. The methods vary from attempting to determine the physical area of the probe contact to the use of the contact radius as a var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bacf71ec5550e7e3b6cca9286fe16a0
https://doi.org/10.1116/1.591203
https://doi.org/10.1116/1.591203
Publikováno v:
Journal of Applied Physics. 68:3799-3799
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c10f8c54bfd1900a874c2884663fc69
https://doi.org/10.1063/1.347205
https://doi.org/10.1063/1.347205